NDD05N50Z-1G ON Semiconductor, NDD05N50Z-1G Datasheet - Page 5

• Manufacturer Part Number: NDD05N50Z-1G
• Description: MOSFET N-CH 500V 5A IPAK
• Manufacturer: ON Semiconductor

Specifications of NDD05N50Z-1G

• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Mounting Type: Through Hole
• Power - Max: 83W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 18.5nC @ 10V
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Current - Continuous Drain (id) @ 25° C: 4.7A
• Drain To Source Voltage (vdss): 500V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.01
100
0.1
10
1
0.01
0.01
0.1
0.1
0.1
1E−06
1E−06
10
10
1
1
Figure 12. Maximum Rated Forward Biased
V
SINGLE PULSE
T
1.0%
50% (DUTY CYCLE)
50% (DUTY CYCLE)
5.0%
2.0%
1.0%
C
GS
20%
10%
2.0%
SINGLE PULSE
5.0%
20%
10%
= 25°C
V
v 30 V
DS
Safe Operating Area NDF05N50Z
SINGLE PULSE
, DRAIN−TO−SOURCE VOLTAGE (V)
1E−05
1E−05
1
R
THERMAL LIMIT
PACKAGE LIMIT
DS(on)
Figure 15. Thermal Impedance (Junction−to−Case) for NDD05N50Z
Figure 14. Thermal Impedance (Junction−to−Case) for NDF05N50Z
10 ms
LIMIT
1E−04
1E−04
10
dc
1 ms
100 ms
TYPICAL CHARACTERISTICS
1E−03
1E−03
100
10 ms
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1E−02
1E−02
1000
PULSE TIME (s)
PULSE TIME (s)
5
0.01
100
0.1
10
1
0.1
1E−01
1E−01
V
SINGLE PULSE
T
Figure 13. Maximum Rated Forward Biased
GS
C
= 25°C
v 30 V
V
Safe Operating Area NDD05N50Z
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
1
1E+00
1E+00
R
THERMAL LIMIT
PACKAGE LIMIT
DS(on)
10 ms
10
1E+01
1E+01
LIMIT
1 ms
100 ms
dc
R
Steady State
qJC
10 ms
R
Steady State
100
1E+02
1E+02
qJC
= 1.5°C/W
= 4.4°C/W
1E+03
1E+03
1000