NDD05N50Z-1G ON Semiconductor, NDD05N50Z-1G Datasheet - Page 6

• Manufacturer Part Number: NDD05N50Z-1G
• Description: MOSFET N-CH 500V 5A IPAK
• Manufacturer: ON Semiconductor

Specifications of NDD05N50Z-1G

• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Mounting Type: Through Hole
• Power - Max: 83W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 18.5nC @ 10V
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Current - Continuous Drain (id) @ 25° C: 4.7A
• Drain To Source Voltage (vdss): 500V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.01
100
0.1
10
1E−06
1
50% (DUTY CYCLE)
5.0%
2.0%
1.0%
20%
10%
SINGLE PULSE
1E−05
Figure 16. Thermal Impedance (Junction−to−Ambient) for NDD05N50Z
Measurement made between leads and heatsink with all leads shorted together.
*For additional mounting information, please download the ON Semiconductor
Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
1E−04
Figure 17. Isolation Test Diagram
TYPICAL CHARACTERISTICS
1E−03
http://onsemi.com
1E−02
PULSE TIME (s)
6
1E−01
HEATSINK
0.110″ MIN
LEADS
1E+00
1E+01
R
Steady State
qJA
1E+02
= 38°C/W
1E+03