NDD04N60Z-1G ON Semiconductor, NDD04N60Z-1G Datasheet

MOSFET N-CH 600V 4A IPAK

NDD04N60Z-1G

Manufacturer Part Number
NDD04N60Z-1G
Description
MOSFET N-CH 600V 4A IPAK
Manufacturer
ON Semiconductor
Datasheet

Specifications of NDD04N60Z-1G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2 Ohm @ 2A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
4.1A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
19nC @ 10V
Input Capacitance (ciss) @ Vds
535pF @ 25V
Power - Max
83W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.8 Ohms
Drain-source Breakdown Voltage
600 V
Continuous Drain Current
4.1 A
Power Dissipation
83 W
Forward Transconductance Gfs (max / Min)
3.3 S
Gate Charge Qg
19 nC
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NDD04N60Z-1G
Manufacturer:
ON
Quantity:
12 500
Part Number:
NDD04N60Z-1G
Manufacturer:
ON
Quantity:
12 500
Company:
Part Number:
NDD04N60Z-1G
Quantity:
30
Company:
Part Number:
NDD04N60Z-1G
Quantity:
4 500
NDF04N60Z, NDP04N60Z,
NDD04N60Z
N-Channel Power MOSFET
600 V, 1.8 W
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1″ sq. pad size (Cu area = 1.127 in sq
2. Limited by maximum junction temperature
3. I
ABSOLUTE MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2010
April, 2010 − Rev. 3
Drain−to−Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current,
Power Dissipation R
Gate−to−Source Voltage
Single Pulse Avalanche
ESD (HBM) (JESD22−A114)
RMS Isolation Voltage
Peak Diode Recovery
Continuous Source Current
Maximum Temperature for
Operating Junction and
Storage Temperature Range
Low ON Resistance
Low Gate Charge
100% Avalanche Tested
These Devices are Pb−Free and are RoHS Compliant
[2 oz] including traces).
SD
R
R
V
(Note 1)
Energy, I
(t = 0.3 sec., R.H. ≤ 30%,
T
(Body Diode)
Soldering Leads
A
GS
qJC
qJC
= 4.0 A, di/dt ≤ 100 A/ms, V
= 25°C) (Figure 15)
, T
@ 10V
Parameter
A
D
= 100°C
= 4.0 A
qJC
Symbol
DD
T
V
V
dv/dt
V
J
V
E
I
P
T
, T
DSS
DM
I
I
ISO
I
esd
GS
≤ BV
D
D
AS
S
D
L
stg
(T
C
DSS
= 25°C unless otherwise noted)
(Note 2)
(Note 2)
(Note 2)
, T
4500
NDF
4.4
2.8
18
28
J
= +150°C
4.5 (Note 3)
−55 to 150
3000
600
±30
120
260
4.0
NDP
4.4
2.8
18
96
NDD
4.1
2.6
16
83
1
V/ns
Unit
mJ
°C
°C
W
V
A
A
A
V
V
V
A
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
CASE 221D
TO−220FP
1
STYLE 1
2
3
600 V
V
G (1)
DSS
ORDERING INFORMATION
CASE 221A
1
TO−220AB
STYLE 5
http://onsemi.com
2
3
N−Channel
D (2)
Publication Order Number:
CASE 369D
R
STYLE 2
1
DS(on)
IPAK
2
S (3)
3
1.8 Ω
(TYP) @ 2 A
NDF04N60Z/D
4
CASE 369AA
1 2
STYLE 2
DPAK
3
4

Related parts for NDD04N60Z-1G

NDD04N60Z-1G Summary of contents

Page 1

... NDF04N60Z, NDP04N60Z, NDD04N60Z N-Channel Power MOSFET 600 V, 1.8 W Features • Low ON Resistance • Low Gate Charge • 100% Avalanche Tested • These Devices are Pb−Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (T Parameter Symbol Drain−to−Source Voltage V DSS Continuous Drain Current ...

Page 2

... SOURCE−DRAIN DIODE CHARACTERISTICS (T Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge 4. Insertion mounted 5. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%. NDP04N60Z NDF04N60Z NDD04N60Z (Note 4) NDP04N60Z (Note 4) NDF04N60Z (Note 1) NDD04N60Z (Note 4) NDD04N60Z− 25°C unless otherwise noted) J Test Conditions Reference to 25°C, DBV ...

Page 3

25° DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 3.5 3 2 (V) GS Figure 3. On−Resistance ...

Page 4

... V Figure 10. Diode Forward Voltage vs. Current 100 100 0.1 R DS(on) Thermal Limit Package Limit 0.01 100 1000 1 V Figure 12. Maximum Rated Forward Biased Safe Operating Area for NDD04N60Z http://onsemi.com Qgd 25° 0.6 0.7 0.8 0.9 , SOURCE−TO−DRAIN VOLTAGE (V) ...

Page 5

... Figure 14. Thermal Impedance for NDD04N60Z Figure 15. Mounting Position for Isolation Test Measurement made between leads and heatsink with all leads shorted together. *For additional mounting information, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ...

Page 6

... ORDERING INFORMATION Order Number NDF04N60ZG NDP04N60ZG NDD04N60Z−1G NDD04N60ZT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NDF04N60ZG or NDP04N60ZG AYWW Gate Source Drain Package TO−220FP (Pb−Free) TO−220AB (Pb− ...

Page 7

PACKAGE DIMENSIONS TO−220 FULLPAK −B− −Y− 0.25 (0.010 ...

Page 8

−T− SEATING K PLANE 0.13 (0.005) M PACKAGE DIMENSIONS IPAK CASE 369D−01 ISSUE http://onsemi.com 8 NOTES: 1. DIMENSIONING AND ...

Page 9

... PL 0.13 (0.005) *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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