NDD04N60Z-1G ON Semiconductor, NDD04N60Z-1G Datasheet - Page 6

• Manufacturer Part Number: NDD04N60Z-1G
• Description: MOSFET N-CH 600V 4A IPAK
• Manufacturer: ON Semiconductor

Specifications of NDD04N60Z-1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2 Ohm @ 2A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 4.1A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 535pF @ 25V
• Power - Max: 83W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.8 Ohms
• Drain-source Breakdown Voltage: 600 V
• Continuous Drain Current: 4.1 A
• Power Dissipation: 83 W
• Forward Transconductance Gfs (max / Min): 3.3 S
• Gate Charge Qg: 19 nC
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
NDF04N60ZG
NDP04N60ZG
NDD04N60Z−1G
NDD04N60ZT4G
Order Number
Gate
NDP04N60ZG
NDF04N60ZG
AYWW
Drain
or
Source
A
Y
WW
G
MARKING DIAGRAMS
Gate
http://onsemi.com
TO−220FP
TO−220AB
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
= Location Code
= Year
= Work Week
= Pb−Free Package
Package
1
DPAK
Drain
IPAK
Drain
4
2
6
3
Source
Gate
1
Drain
Drain 3
4
2
Source
2500 / Tape and Reel
(In Development)
50 Units / Rail
50 Units / Rail
75 Units / Rail
Shipping
†