NTB5412NT4G ON Semiconductor, NTB5412NT4G Datasheet - Page 2

• Manufacturer Part Number: NTB5412NT4G
• Description: MOSFET N-CH 60V 60A D2PAK
• Manufacturer: ON Semiconductor

Specifications of NTB5412NT4G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 14 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 85nC @ 0V
• Input Capacitance (ciss) @ Vds: 3220pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 11.1 Ohms
• Forward Transconductance Gfs (max / Min): 58 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 60 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
CHARGES, CAPACITANCES & GATE RESISTANCE
SWITCHING CHARACTERISTICS, V
DRAIN−SOURCE DIODE CHARACTERISTICS
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage Temper-
ature Coefficient
Zero Gate Voltage Drain Current
Gate−Body Leakage Current
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Voltage
Static Drain−to−Source On−Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Stored Charge
Characteristics
GS
= 10 V (Note 3)
(T
J
= 25°C Unless otherwise specified)
V
V
V
(BR)DSS
Symbol
Q
R
V
V
GS(th)
Q
(BR)DSS
t
t
I
I
C
G(TOT)
Q
Q
Q
DS(on)
DS(on)
C
V
GS(th)
C
d(on)
g
d(off)
DSS
GSS
G(TH)
t
t
t
FS
oss
t
t
SD
rss
GS
GD
RR
iss
rr
a
b
r
f
http://onsemi.com
/T
/T
J
J
V
V
V
V
GS
I
2
DS
V
I
S
V
GS
V
GS
S
V
V
V
DS
V
V
V
I
GS
GS
= 60 A
D
DS
DS
GS
= 60 A
= 10 V, I
= 60 V
GS
GS
GS
= 0 V
= 0 V
dI
= 60 A, R
Test Condition
= 0 V, V
= 10 V, V
= V
= 0 V, I
= 25 V, V
= 0 V, V
S
= 10 V, I
= 10 V, I
= 15 V, I
/dt = 100 A/ms
f = 1 MHz
I
D
DS
dc
= 60 A
D
, V
, I
GS
D
= 30 A, 150°C
D
DS
G
GS
DD
= 250 mA
D
D
D
GS
T
= 250 mA
T
= 2.5 W
T
= $20 V
T
J
= 60 A
= 30 A
= 30 A
J
= 48 V,
= 0 V
J
J
= 48 V,
= 0 V,
= 150°C
= 125°C
= 25°C
= 25°C
dc
,
Min
2.0
60
2325
54.6
0.75
11.1
13.4
Typ
440
170
115
3.3
6.4
0.7
2.8
1.0
0.9
58
66
31
14
41
89
75
54
21
96
$100
3220
Max
100
1.0
4.0
1.2
1.2
14
85
mV/°C
mV/°C
Unit
mW
V
nA
nC
nC
mA
pF
ns
ns
V
V
V
S
dc