NTB5412NT4G ON Semiconductor, NTB5412NT4G Datasheet - Page 5

• Manufacturer Part Number: NTB5412NT4G
• Description: MOSFET N-CH 60V 60A D2PAK
• Manufacturer: ON Semiconductor

Specifications of NTB5412NT4G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 14 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 85nC @ 0V
• Input Capacitance (ciss) @ Vds: 3220pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 11.1 Ohms
• Forward Transconductance Gfs (max / Min): 58 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 60 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
NTP5412NG
NTB5412NT4G
0.001
0.01
100
0.1
10
0.000001
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
Device
0.00001
0.0001
TYPICAL PERFORMANCE CURVES
0.001
Figure 13. Thermal Response
http://onsemi.com
t, PULSE TIME (s)
0.01
TO−220AB
(Pb−Free)
(Pb−Free)
Package
D
5
2
PAK
Surface−Mounted on FR4 Board using 1 sq in pad size, 1 oz Cu
0.1
1
800 / Tape & Reel
10
50 Units / Rail
Shipping
†
100
1000