MTB2P50ET4G ON Semiconductor, MTB2P50ET4G Datasheet
MTB2P50ET4G
Specifications of MTB2P50ET4G
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MTB2P50ET4G Summary of contents
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... R qJC MTB2P50ET4 R 62.5 qJA R 50 qJA MTB2P50ET4G °C T 260 L †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. ...
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ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−Source Breakdown Voltage = 250 mAdc Vdc Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (V = 500 Vdc Vdc 500 Vdc, ...
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TYPICAL ELECTRICAL CHARACTERISTICS 25° 3.5 3 2.5 2 1 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics ...
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Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Dt) are determined by how fast the FET input capacitance can be charged by current from the ...
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TOTAL CHARGE (nC) T Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge DRAIN−TO−SOURCE DIODE CHARACTERISTICS ...
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SINGLE PULSE T = 25° 100 0.1 R LIMIT DS(on) THERMAL LIMIT PACKAGE LIMIT 0.01 0 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated Forward ...
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... PL 0.13 (0.005 VARIABLE CONFIGURATION ZONE VIEW W−W VIEW W−W 1 10.66 0.42 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. MTB2P50E PACKAGE DIMENSIONS 2 D PAK 3 CASE 418B−04 ISSUE ...
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... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...