MTB2P50ET4G ON Semiconductor, MTB2P50ET4G Datasheet

MOSFET P-CH 500V 2A D2PAK

MTB2P50ET4G

Manufacturer Part Number
MTB2P50ET4G
Description
MOSFET P-CH 500V 2A D2PAK
Manufacturer
ON Semiconductor
Datasheet

Specifications of MTB2P50ET4G

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6 Ohm @ 1A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
2A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
27nC @ 10V
Input Capacitance (ciss) @ Vds
1183pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
MTB2P50ET4G
Manufacturer:
ROHM
Quantity:
30 000
Price:
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
MTB2P50ET4G
Manufacturer:
ON
Quantity:
12 500
Price:
MTB2P50E
Power MOSFET
2 Amps, 500 Volts
P−Channel D
to provide enhanced voltage−blocking capability without degrading
performance over time. In addition, this Power MOSFET is designed
to withstand high energy in the avalanche and commutation modes.
The energy efficient design also offers a drain−to−source diode with a
fast recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating areas are critical and
offer additional safety margin against unexpected voltage transients.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using the minimum recommended
© Semiconductor Components Industries, LLC, 2006
June, 2006 − Rev. 4
MAXIMUM RATINGS
Drain−Source Voltage
Drain−Gate Voltage (R
Gate−Source Voltage − Continuous
Non−Repetitive (t
Drain Current − Continuous
Drain Current
Drain Current
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ T
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
(V
I
Thermal Resistance
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 sec
L
This high voltage MOSFET uses an advanced termination scheme
Fast Recovery Diode
Robust High Voltage Termination
Avalanche Energy Specified
Source−to−Drain Diode Recovery Time Comparable to a Discrete
Diode is Characterized for Use in Bridge Circuits
I
Short Heatsink Tab Manufactured — Not Sheared
Specially Designed Leadframe for Maximum Power Dissipation
Pb−Free Package is Available
pad size.
DD
= 4.0 Apk, L = 10 mH, R
DSS
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Ambient (Note 1)
= 100 Vdc, V
and V
DS(on)
− Continuous @ 100°C
− Single Pulse (t
p
GS
≤ 10 ms)
J
Rating
= 25°C
Specified at Elevated Temperature
= 10 Vdc,
GS
2
PAK
(T
= 1.0 MW)
C
G
A
= 25°C unless otherwise noted)
= 25 W)
Preferred Device
= 25°C (Note 1)
p
≤ 10 ms)
Symbol
T
V
V
V
R
R
R
J
V
E
I
GSM
P
, T
DSS
DGR
T
I
I
DM
qJC
qJA
qJA
GS
AS
D
D
D
L
stg
Value
−55 to
1.67
62.5
500
500
± 20
± 40
260
150
2.0
1.6
6.0
0.6
2.5
75
80
50
1
W/°C
°C/W
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
mJ
°C
°C
W
†For information on tape and reel specifications,
Preferred devices are recommended choices for future use
and best overall value.
MTB2P50ET4
MTB2P50ET4G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MARKING DIAGRAM & PIN ASSIGNMENT
Device
2 AMPERES, 500 VOLTS
1
T2P50E = Device Code
A
Y
WW
G
ORDERING INFORMATION
G
http://onsemi.com
Gate
R
DS(on)
1
= Assembly Location
= Year
= Work Week
= Pb−Free Package
P−Channel
(Pb−Free)
T
P50EG
AYWW
Package
D
D
D
Drain
Drain
2
2
PAK
PAK
Publication Order Number:
4
2
= 6 W
S
2
CASE 418B
STYLE 2
3
Source
800/Tape & Reel
800/Tape & Reel
D
2
PAK
Shipping
MTB2P50E/D

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MTB2P50ET4G Summary of contents

Page 1

... R qJC MTB2P50ET4 R 62.5 qJA R 50 qJA MTB2P50ET4G °C T 260 L †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−Source Breakdown Voltage = 250 mAdc Vdc Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (V = 500 Vdc Vdc 500 Vdc, ...

Page 3

TYPICAL ELECTRICAL CHARACTERISTICS 25° 3.5 3 2.5 2 1 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics ...

Page 4

Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Dt) are determined by how fast the FET input capacitance can be charged by current from the ...

Page 5

TOTAL CHARGE (nC) T Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge DRAIN−TO−SOURCE DIODE CHARACTERISTICS ...

Page 6

SINGLE PULSE T = 25° 100 0.1 R LIMIT DS(on) THERMAL LIMIT PACKAGE LIMIT 0.01 0 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated Forward ...

Page 7

... PL 0.13 (0.005 VARIABLE CONFIGURATION ZONE VIEW W−W VIEW W−W 1 10.66 0.42 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. MTB2P50E PACKAGE DIMENSIONS 2 D PAK 3 CASE 418B−04 ISSUE ...

Page 8

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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