IRFP9140 Vishay, IRFP9140 Datasheet - Page 5

• Manufacturer Part Number: IRFP9140
• Description: MOSFET P-CH 100V 21A TO-247AC
• Manufacturer: Vishay

Specifications of IRFP9140

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 200 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 61nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 25V
• Power - Max: 180W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.2 Ohms
• Drain-source Breakdown Voltage: - 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 21 A
• Power Dissipation: 180 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFP9140

Document Number: 91238
S09-0005-Rev. A, 19-Jan-09
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
10 %
90 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
GS
DS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
- 10 V
V
IRFP9140, SiHFP9140
GS
t
d(on)
V
DS
t
r
D.U.T.
Vishay Siliconix
R
D
t
d(off)
t
f
+
-
www.vishay.com
V
DD
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