IRFP9140 Vishay, IRFP9140 Datasheet - Page 6

• Manufacturer Part Number: IRFP9140
• Description: MOSFET P-CH 100V 21A TO-247AC
• Manufacturer: Vishay

Specifications of IRFP9140

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 200 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 61nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 25V
• Power - Max: 180W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.2 Ohms
• Drain-source Breakdown Voltage: - 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 21 A
• Power Dissipation: 180 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFP9140

IRFP9140, SiHFP9140
Vishay Siliconix
www.vishay.com
6
Vary t
required I
p
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
- 10 V
Fig. 13a - Basic Gate Charge Waveform
AS
V
G
R
- 10 V
G
Q
V
GS
DS
t
p
Charge
Q
Q
GD
G
I
AS
D.U.T
0.01 Ω
L
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
+
-
V
DD
Fig. 12b - Unclamped Inductive Waveforms
V
I
AS
DS
12 V
V
Fig. 13b - Gate Charge Test Circuit
GS
Same type as D.U.T.
Current regulator
0.2 µF
- 3 mA
Current sampling resistors
50 kΩ
0.3 µF
t
p
I
G
S09-0005-Rev. A, 19-Jan-09
Document Number: 91238
D.U.T.
V
I
D
DS
+
-
V
V
DS
DD