IRF820S Vishay, IRF820S Datasheet - Page 3
![MOSFET N-CH 500V 2.5A D2PAK](/photos/5/29/52982/vishay-d2pak_sml.jpg)
IRF820S
Manufacturer Part Number
IRF820S
Description
MOSFET N-CH 500V 2.5A D2PAK
Manufacturer
Vishay
Datasheet
1.IRF820S.pdf
(8 pages)
Specifications of IRF820S
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3 Ohm @ 1.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
2.5A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
24nC @ 10V
Input Capacitance (ciss) @ Vds
360pF @ 25V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF820S
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 91060
S-83030-Rev. A, 19-Jan-09
91060_01
91060_02
Fig. 2 - Typical Output Characteristics, T
10
Fig. 1 - Typical Output Characteristics, T
10
10
10
-1
0
-1
0
10
10
Top
Bottom
0
Top
Bottom
0
V
V
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
DS
V
DS ,
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
GS
V
, Drain-to-Source Voltage (V)
GS
Drain-to-Source Voltage (V)
10
10
1
1
20 µs Pulse Width
T
20 µs Pulse Width
T
C
C
=
=
25 °C
150 °C
C
C
4.5 V
4.5 V
= 150 °C
= 25 °C
91060_03
91060_04
Fig. 4 - Normalized On-Resistance vs. Temperature
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-1
0
- 60 - 40 - 20 0
Fig. 3 - Typical Transfer Characteristics
4
150
I
V
D
GS
= 2.1 A
°
= 10 V
C
V
5
GS ,
T
J ,
25
IRF820S, SIHF820S
Junction Temperature (°C)
Gate-to-Source Voltage (V)
°
C
6
20 40 60 80 100 120 140 160
7
Vishay Siliconix
20 µs Pulse Width
V
DS
8
=
50 V
www.vishay.com
9
10
3