IRF820S Vishay, IRF820S Datasheet - Page 4

• Manufacturer Part Number: IRF820S
• Description: MOSFET N-CH 500V 2.5A D2PAK
• Manufacturer: Vishay

Specifications of IRF820S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 2.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Input Capacitance (ciss) @ Vds: 360pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF820S

IRF820S, SIHF820S
Vishay Siliconix
www.vishay.com
4
91060_06
91060_05
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
800
600
400
200
20
16
12
8
4
0
0
10
0
I
0
D
= 2.1 A
V
4
DS ,
Q
G
Drain-to-Source Voltage (V)
V
, Total Gate Charge (nC)
DS
8
= 100 V
V
V
C
C
C
DS
GS
iss
rss
oss
12
= 250 V
= 0 V, f = 1 MHz
= C
= C
= C
V
10
DS
gs
gd
ds
1
C
C
C
+ C
+ C
= 400 V
16
iss
oss
rss
gd
gd
For test circuit
see figure 13
, C
ds
20
Shorted
24
91060_07
91060_08
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
0.1
10
-2
1
0
2
5
2
5
2
5
2
5
2
Fig. 8 - Maximum Safe Operating Area
0.4
0.1
2
150
5
V
V
°
C
SD
DS
1
Operation in this area limited
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
0.6
2
5
T
T
Single Pulse
10
C
J
by R
= 150 °C
= 25 °C
2
0.8
25
DS(on)
5
°
S-83030-Rev. A, 19-Jan-09
10
C
Document Number: 91060
2
2
1.0
5
10
100
1
10
10
V
ms
µs
ms
3
GS
µs
2
= 0 V
5
10
1.2
4