IRF9Z24STRR Vishay, IRF9Z24STRR Datasheet

MOSFET P-CH 60V 11A D2PAK

IRF9Z24STRR

Manufacturer Part Number
IRF9Z24STRR
Description
MOSFET P-CH 60V 11A D2PAK
Manufacturer
Vishay
Datasheet

Specifications of IRF9Z24STRR

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
280 mOhm @ 6.6A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
19nC @ 10V
Input Capacitance (ciss) @ Vds
570pF @ 25V
Power - Max
3.7W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. Uses IRF9Z24, SiHF9Z24 data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91091
S09-0073-Rev. A, 02-Feb-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
I
2
DS
DS(on)
g
gs
gd
SD
PAK
DD
(Max.) (nC)
(nC)
(nC)
(V)
≤ - 11 A, dI/dt ≤ 140 A/µs, V
= - 25 V, starting T
(TO-262)
(Ω)
G
D
S
a, e
G
D
J
2
D
PAK (TO-263)
e
= 25 °C, L = 2.3 mH, R
S
c, e
D
IRF9Z24SPbF
SiHF9Z24S-E3
IRF9Z24S
SiHF9Z24S
a
a
2
PAK (TO-263)
V
b, e
DD
GS
≤ V
= - 10 V
DS
, T
G
Single
J
- 60
5.4
IRF9Z24S, IRF9Z24L, SiHF9Z24S, SiHF9Z24L
19
11
≤ 175 °C.
P-Channel MOSFET
G
= 25 Ω, I
C
Power MOSFET
V
= 25 °C, unless otherwise noted
0.28
S
D
GS
D
IRF9Z24STRLPbF
SiHF9Z24STL-E3
IRF9Z24STRL
SiHF9Z24STL
at - 10 V
2
AS
PAK (TO-263)
T
= - 11 A (see fig. 12).
T
for 10 s
A
C
= 25 °C
= 25 °C
T
T
C
C
a
a
= 100 °C
= 25 °C
FEATURES
• Advanced Process Technology
• Surface Mount (IRF9Z24S, SiHF9Z24S)
• Low-Profile Through-Hole (IRF9Z24L, SiHF9Z24L)
• 175 °C Operating Temperature
• Fast Switching
• P-Channel
• Fully Avalanche Rated
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The D
accommodating die size up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in
any existing surface mount package. The D
for high current applications because of its low internal
connection resistance and can dissipate up to 2.0 W in a
typical surface mount application.
The through-hole version (IR9Z24L, SiH9Z24L) is available
for low-profile applications.
a
a
2
PAK is a surface mount power package capable of
SYMBOL
D
IRF9Z24STRRPbF
SiHF9Z24STR-E3
IRF9Z24STRR
SiHF9Z24STR
T
2
dV/dt
J
PAK (TO-263)
V
V
E
E
I
I
P
, T
I
DM
AR
DS
GS
AS
AR
D
D
stg
a
a
a
a
- 55 to + 175
LIMIT
300
± 20
- 7.7
0.40
- 4.5
- 60
- 11
- 44
240
- 11
6.0
3.7
60
Vishay Siliconix
d
I
IRF9Z24LPbF
SiHF9Z24L-E3
IRF9Z24L
SiHF9Z24L
2
PAK (TO-262)
2
PAK is suitable
www.vishay.com
UNIT
W/°C
V/ns
RoHS*
COMPLIANT
mJ
mJ
°C
W
W
V
A
A
Available
1

Related parts for IRF9Z24STRR

IRF9Z24STRR Summary of contents

Page 1

... ° 100 ° ° °C C for Ω (see fig. 12 ≤ 175 ° Vishay Siliconix 2 PAK is suitable PAK (TO-263) I PAK (TO-262) a IRF9Z24STRRPbF IRF9Z24LPbF a SiHF9Z24STR-E3 SiHF9Z24L-E3 a IRF9Z24STRR IRF9Z24L a SiHF9Z24STR SiHF9Z24L SYMBOL LIMIT ± 7 0.40 E 240 6 dV/ 175 J stg ...

Page 2

... IRF9Z24S, IRF9Z24L, SiHF9Z24S, SiHF9Z24L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... V Bottom - 4 µs Pulse Width Drain-to-Source Voltage ( 91091_02 Fig Typical Output Characteristics Document Number: 91091 S09-0073-Rev. A, 02-Feb-09 IRF9Z24S, IRF9Z24L, SiHF9Z24S, SiHF9Z24L - 4 ° 91091_03 - 4 175 ° 91091_04 Vishay Siliconix ° ° 175 µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics 3 2.5 2 ...

Page 4

... IRF9Z24S, IRF9Z24L, SiHF9Z24S, SiHF9Z24L Vishay Siliconix 1250 MHz iss rss gd 1000 oss ds 750 500 250 Drain-to-Source Voltage ( 91091_05 Fig Typical Capacitance vs. Drain-to-Source Voltage Total Gate Charge (nC) 91091_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss C oss C rss 1 91091_07 Fig Typical Source-Drain Diode Forward Voltage ...

Page 5

... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91091 S09-0073-Rev. A, 02-Feb-09 IRF9Z24S, IRF9Z24L, SiHF9Z24S, SiHF9Z24L 125 150 175 Single Pulse (Thermal Response Rectangular Pulse Duration ( Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...

Page 6

... IRF9Z24S, IRF9Z24L, SiHF9Z24S, SiHF9Z24L Vishay Siliconix Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 800 Top Bottom 600 400 200 125 100 Starting T , Junction Temperature (°C) 91091_12c J Fig. 12c - Maximum Avalanche Energy vs. Drain Current 4 7 150 175 Current regulator Same type as D.U.T. ...

Page 7

... Inductor current * V Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91091. ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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