IRFBC40AS Vishay, IRFBC40AS Datasheet - Page 6

• Manufacturer Part Number: IRFBC40AS
• Description: MOSFET N-CH 600V 6.2A D2PAK
• Manufacturer: Vishay

Specifications of IRFBC40AS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 3.7A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 6.2A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 42nC @ 10V
• Input Capacitance (ciss) @ Vds: 1036pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFBC40AS

IRFBC40AS, SiHFBC40AS
Vishay Siliconix
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Fig. 12d - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
Q
G
10 V
12 V
0.2 µF
0.3 µF
Q
Q
+
GS
GD
V
D.U.T.
DS
-
V
G
V
GS
3 mA
Charge
I
I
G
D
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test Circuit
www.vishay.com
Document Number: 91113
6
S11-1053-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000