IRL2203S Vishay, IRL2203S Datasheet - Page 3

• Manufacturer Part Number: IRL2203S
• Description: MOSFET N-CH 30V 100A D2PAK
• Manufacturer: Vishay
• Series: HEXFET®r

Specifications of IRL2203S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3500pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

1000
1 0 0 0
1 0 0
100
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics,
1 0
10
1
1
2 . 0
0.1
TOP
BOTTOM 2.5V
3 . 0
V
V
T = 2 5 °C
G S
D S
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
J
, Ga te-to-S o urce V oltage (V )
, Drain-to-S ource Voltage (V )
4 . 0
T
J
1
= 25
2.5 V
5 . 0
T = 1 75 °C
o
J
C
6 . 0
V
2 0 µ s P U L SE W ID TH
2 0µ s PU L SE W ID TH
T = 2 5°C
DS
J
= 1 5 V
10
7 . 0
8 . 0
100
9 . 0
A
A
1000
100
2 . 0
1 . 5
1 . 0
0 . 5
0 . 0
10
1
0.1
- 6 0 - 4 0 - 2 0
Fig 2. Typical Output Characteristics,
Fig 4. Normalized On-Resistance
TOP
BOTTOM 2.5V
I
D
= 100 A
T , Junction Tem perature (°C )
V
J
D S
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
Vs. Temperature
0
, Drain-to-S ource Voltage (V )
2 0
1
T
J
4 0
= 175
2 .5V
6 0
o
8 0
2 0µ s PU L SE W ID TH
T = 1 75 °C
C
J
1 0 0 1 2 0 1 4 0 1 6 0 1 8 0
10
V
G S
= 10V
100
A
A