IRL2203S Vishay, IRL2203S Datasheet - Page 4

• Manufacturer Part Number: IRL2203S
• Description: MOSFET N-CH 30V 100A D2PAK
• Manufacturer: Vishay
• Series: HEXFET®r

Specifications of IRL2203S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3500pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

8000
6000
4000
2000
1 0 0 0
1 0 0
1 0
0
0 . 5
1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
Drain-to-Source Voltage
C
C
C
V
V
is s
o s s
1 . 0
rs s
D S
S D
V
C
C
C
, Drain-to-Source V oltage (V)
, S ource-to-Drain Voltage (V )
Forward Voltage
G S
is s
rs s
o ss
T = 25 °C
J
1 . 5
= 0 V,
= C
= C
= C
gs
ds
gd
+ C
+ C
2 . 0
10
T = 17 5°C
J
gd
g d
f = 1M H z
, C
2 . 5
ds
SH O RTE D
V
3 . 0
G S
= 0 V
100
3 . 5
A
A
1000
100
10
15
12
1
9
6
3
0
1
0
T
T
S ing le Pulse
Fig 8. Maximum Safe Operating Area
I
Fig 6. Typical Gate Charge Vs.
D
C
J
= 60A
= 25 °C
= 17 5°C
Gate-to-Source Voltage
O PER ATIO N IN TH IS AR EA L IM ITED
V
D S
30
Q , T otal G ate Charge (nC)
G
, Drain-to-Source Voltage (V)
60
BY R
V
V
10
D S
D S
DS (o n)
= 24 V
= 15 V
FOR TE ST CIR C UIT
90
SEE FIGU RE 1 3
10 µs
10 0µs
1m s
10m s
120
100
150
A
A