PSMN005-75P,127 NXP Semiconductors, PSMN005-75P,127 Datasheet - Page 3

• Manufacturer Part Number: PSMN005-75P,127
• Description: MOSFET N-CH 75V 75A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN005-75P,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 165nC @ 10V
• Input Capacitance (ciss) @ Vds: 8250pF @ 25V
• Power - Max: 230W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934057042127; PSMN005-75P; PSMN005-75P

Philips Semiconductors
9397 750 09743
Product data
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
(A)
I D
T
P der
P
(%)
10 3
10 2
120
mb
10
der
80
40
1
0
function of mounting base temperature.
= 25 C; I
1
0
=
---------------------- -
P
Limit R DSon = V DS /I D
tot 25 C
P
tot
DM
50
is single pulse.
100%
100
150
T mb ( C)
03aa16
200
Rev. 01 — 26 April 2002
10
N-channel enhancement mode field-effect transistor
Fig 2. Normalized continuous drain current as a
DC
I der
(%)
I
120
100
der
80
60
40
20
0
function of mounting base temperature.
0
=
-------------------
I
D 25 C
I
30
D
PSMN005-75P/75B
60
100%
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
90
120
V DS (V)
150
T mb (ºC)
03ah91
03ah89
10 2
180
t p = 10 µs
100 ms
100 µs
10 ms
3 of 13
1 ms