PSMN005-75P,127 NXP Semiconductors, PSMN005-75P,127 Datasheet - Page 8

• Manufacturer Part Number: PSMN005-75P,127
• Description: MOSFET N-CH 75V 75A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN005-75P,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 165nC @ 10V
• Input Capacitance (ciss) @ Vds: 8250pF @ 25V
• Power - Max: 230W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934057042127; PSMN005-75P; PSMN005-75P

Philips Semiconductors
9397 750 09743
Product data
Fig 12. Source (diode forward) current as a function of
T
(A)
100
I S
j
80
60
40
20
= 25 C and 175 C; V
0
source-drain (diode forward) voltage; typical
values.
0.0
V GS = 0 V
175 ºC
0.5
GS
= 0 V
T j = 25 ºC
1.0
V SD (V)
03ah96
1.5
Rev. 01 — 26 April 2002
N-channel enhancement mode field-effect transistor
Fig 13. Gate-source voltage as a function of gate
V GS
(V)
I
D
12
10
= 75 A; V
8
6
4
2
0
charge; typical values.
0
I D = 75 A
V DD = 60 V
T j = 25 ºC
DD
PSMN005-75P/75B
= 60 V
50
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
100
150
Q G (nC)
03ah98
200
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