IRF3315 International Rectifier, IRF3315 Datasheet - Page 2

• Manufacturer Part Number: IRF3315
• Description: MOSFET N-CH 150V 27A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3315

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 70 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 27A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 95nC @ 10V
• Input Capacitance (ciss) @ Vds: 1300pF @ 25V
• Power - Max: 136W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF3315

IRF3315
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
Notes:
I
I
I
I
V
t
Q
t
V
R
V
g
Q
Q
Q
t
t
t
t
L
L
C
C
C
DSS
GSS
d(on)
f
S
on
r
d(off)
SM
rr
V
fs
D
S
SD
(BR)DSS
GS(th)
DS(on)
g
gs
gd
iss
oss
rss
rr
Repetitive rating; pulse width limited by
R
2
(BR)DSS
max. junction temperature. ( See fig. 11 )
Starting T
G
= 25
/ T
J
J
, I
Drain-to-Source Leakage Current
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance –––
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Internal Drain Inductance
Internal Source Inductance
= 25°C, L = 4.9mH
AS
= 12A. (See Figure 12)
Parameter
Parameter
J
= 25°C (unless otherwise specified)
APPROVED
I
11.4
Pulse width
T
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
150
––– 0.187 –––
–––
–––
–––
–––
Min. Typ. Max. Units
SD
Min. Typ. Max. Units
2.0
–––
–––
–––
–––
–––
–––
J
Intrinsic turn-on time is negligible (turn-on is dominated by L
175°C
12A, di/dt
1300 –––
–––
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
300
160
–––
–––
–––
174
––– 0.07
9.6
1.2
4.5
32
49
38
7.5
–––
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
260
4.0
1.3
1.7
25
95
11
47
108
300µs; duty cycle
27
140A/µs, V
V/°C
nC
nH
µC
µA
nA
ns
pF
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
ƒ = 1.0MHz, See Fig. 5
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
V
MOSFET symbol
integral reverse
D
D
DD
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= 12A
= 12A
= 25°C, I
= 25°C, I
= 5.9 , See Fig. 10
= 5.1
= V
= 150V, V
= 120V
= 0V
= 25V
= 0V, I
= 10V, I
= 50V, I
= 120V, V
= 20V
= -20V
= 10V, See Fig. 6 and 13
= 75V
V
(BR)DSS
2%.
GS
, I
D
S
F
D
D
D
= 250µA
Conditions
= 12A, V
= 12A
Conditions
= 250µA
= 12A
= 12A
,
GS
GS
= 0V
= 0V, T
D
www.irf.com
GS
= 1mA
J
= 0V
G
= 125°C
G
S
+L
D
D
S
S
D
)