IRF3315 International Rectifier, IRF3315 Datasheet - Page 3

MOSFET N-CH 150V 27A TO-220AB

IRF3315

Manufacturer Part Number
IRF3315
Description
MOSFET N-CH 150V 27A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF3315

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
70 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
27A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
95nC @ 10V
Input Capacitance (ciss) @ Vds
1300pF @ 25V
Power - Max
136W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF3315

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1000
1000
100
100
10
10
1
1
0.1
4.0
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
TOP
BOTTOM
V
5.0
V
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
GS
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
INPUT NEW DATA
6.0
1
INPUT NEW DATA
T = 25 C
J
7.0
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25 C
°
J
DS
4.5V
8.0
10
= 50V
°
T = 175 C
J
9.0
°
10.0
100
APPROVED
1000
100
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
1
-60 -40 -20 0
0.1
I =
Fig 2. Typical Output Characteristics
TOP
BOTTOM
D
Fig 4. Normalized On-Resistance
27A
V
DS
T , Junction Temperature ( C)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
J
, Drain-to-Source Voltage (V)
INPUT NEW DATA
20 40 60 80 100 120 140 160 180
Vs. Temperature
1
INPUT NEW DATA
IRF3315
20µs PULSE WIDTH
T = 175 C
J
4.5V
10
°
V
°
GS
=
10V
3
100

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