IRF7321D2 International Rectifier, IRF7321D2 Datasheet

IRF7321D2

Manufacturer Part Number

IRF7321D2

Description

MOSFET P-CH 30V 4.7A 8-SOIC

Manufacturer

International Rectifier

Series

FETKY™r

Datasheet

1.IRF7321D2.pdf (8 pages)

Specifications of IRF7321D2

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Diode (Isolated)

Rds On (max) @ Id, Vgs

62 mOhm @ 4.9A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

4.7A

Vgs(th) (max) @ Id

1V @ 250µA

Gate Charge (qg) @ Vgs

34nC @ 10V

Input Capacitance (ciss) @ Vds

710pF @ 25V

Power - Max

Mounting Type

Surface Mount

Package / Case

8-SOIC (3.9mm Width)

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

*IRF7321D2

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF7321D2TR

Manufacturer:

Quantity:

3 046

Current page: 1 of 8
Download datasheet (155Kb)

Description

The FETKY

Schottky diodes offer the designer an innovative board

space saving solution for switching regulator

power management applications.

HEXFETs utilize advanced processing techniques to

achieve extremely low on-resistance per silicon area.

Combinining this technology with International

Rectifier's low forward drop Schottky rectifiers results in

an extremely efficient device suitable for use in a wide

variety of portable electronics applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics. The

SO-8 package is designed for vapor phase, infrared or

wave soldering techniques.

Absolute Maximum Ratings ( T

Thermal Resistance Ratings

Notes:

‚

„

dv/dt

θJA

Pulse width ≤ 300µs – duty cycle ≤ 2%

Low V

Repetitive rating – pulse width limited by max. junction temperature (see fig. 11)

Surface mounted on FR-4 board, t ≤ 10sec.

Co-packaged HEXFET® Power

MOSFET and Schottky Diode

Ideal For Buck Regulator Applications

P-Channel HEXFET®

Generation 5 Technology

SO-8 Footprint

@ T

STG

≤ -2.9A, di/dt ≤ -77A/µs, V

= 25°C

= 70°C

= 25°C

= 70°C

Schottky Rectifier

family of Co-packaged HEXFETs and

Parameter

Continuous Drain Current, V

Pulsed Drain Current À

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery dv/dt Á

Junction and Storage Temperature Range

Parameter

Junction-to-Ambient

≤ V

(BR)DSS

Generation 5

, T

= 25°C Unless Otherwise Noted)

≤ 150°C

and

@ -10V

FETKY MOSFET & Schottky Diode

Top View

-55 to +150

Maximum

IRF7321D2

SO-8

± 20

-4.7

-3.8

-5.0

Maximum

-38

2.0

1.3

62.5

Schottky Vf = 0.52V

DS(on)

DSS

www.irf.com

PD- 91667D

= 0.062Ω

= -30V

Units

mW/°C

°C/W

Units

V/ns

°C

Related parts for IRF7321D2

IRF7321D2 Summary of contents

Page 1

... Surface mounted on FR-4 board, t ≤ 10sec. 1 FETKY MOSFET & Schottky Diode Top View and Generation 5 = 25°C Unless Otherwise Noted -10V GS Ã ≤ 150° (BR)DSS J PD- 91667D IRF7321D2 -30V DSS 0.062Ω 6 DS(on Schottky Vf = 0.52V SO-8 Maximum Units -4.7 A -3.8 -38 2 ...

Page 2

... Vfm Max. Forward voltage drop Irm Max. Reverse Leakage current Ct Max. Junction Capacitance dv/dt Max. Voltage Rate of Charge ( HEXFET is the reg. TM for International Rectifier Power MOSFET 25°C (unless otherwise specified) J Min. Typ. Max. Units Conditions -30 ––– ––– ...

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IRF7321D2 International Rectifier, IRF7321D2 Datasheet

IRF7321D2

Specifications of IRF7321D2

Available stocks

Related parts for IRF7321D2

IRF7321D2 Summary of contents

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Page 2

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Page 8

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