IRF7353D1 International Rectifier, IRF7353D1 Datasheet - Page 2

• Manufacturer Part Number: IRF7353D1
• Description: MOSFET N-CH 30V 6.5A 8-SOIC
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7353D1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 32 mOhm @ 5.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.5A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 33nC @ 10V
• Input Capacitance (ciss) @ Vds: 650pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7353D1

Schottky Diode Maximum Ratings
IRF7353D1
MOSFET Electrical Characteristics @ T
MOSFET Source-Drain Ratings and Characteristics
Schottky Diode Electrical Specifications
I
I
V
I
C
dv/dt
F(av)
SM
Parameter
V
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
Parameter
I
I
V
t
Q
RM
DSS
GSS
d(on)
d(off)
f
S
SM
rr
r
FM
fs
t
(BR)DSS
DS(on)
GS(th)
SD
gd
iss
oss
rss
2
g
gs
rr
Max. Average Forward Current
Max. peak one cycle Non-repetitive
Surge current
Max. Forward voltage drop
Max. Reverse Leakage current
Max. Junction Capacitance
Max. Voltage Rate of Charge
Continuous Source Current (Body Diode) —
Pulsed Source Current (Body Diode)
Body Diode Forward Voltage
Reverse Recovery Time (Body Diode)
Reverse Recovery Charge
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Parameter
Max. Units.
Max. Units
3600 V/ µs
120
0.62
0.57
0.06
Min. Typ. Max. Units
Min. Typ. Max. Units
0.50
0.39
2.7
1.9
11
1.0
16
92
30
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
— 0.78
—
—
J
= 25°C (unless otherwise specified)
0.023 0.032
0.032 0.046
45
58
650
320
130
—
—
2.6
6.4
8.1
8.9
pF
14
22
26
17
—
—
—
—
—
—
-100
100
1.0
1.0
3.9
9.6
2.5
68
87
—
—
—
25
33
12
13
39
26
—
—
—
30
50% Duty Cycle. Rectangular Wave, T
5µs sine or 3µs Rect. pulse
10ms sine or 6ms Rect. pulse load condition &
V
I
I
I
I
V
Rated V
See Fig. 14
F
F
F
F
R
R
= 1.0A, T
= 2.0A, T
= 1.0A, T
= 2.0A, T
= 5Vdc ( 100kHz to 1 MHz) 25°C
= 30V
nA
µA
ns
nC
pF
nC
V
Ω
V
S
ns
A
V
R
J
J
J
J
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz (see figure 7)
Conditions
= 25°C
= 25°C
= 125°C
= 125°C .
V
T
T
D
D
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
J
J
Conditions
T
T
di/dt = 100A/µs Â
= 5.8A
= 1.0A
= 25°C
= 125°C
J
J
= 6.0Ω
= 15Ω
Conditions
= V
= 24V, I
= 24V, V
= 24V, V
= 24V
= 25V
= 0V, I
= 10V, I
= 4.5V, I
= 20V
= -20V
= 10V (see figure 8)
= 15V
= 0V
= 25°C, I
= 25°C, I
GS
Conditions
, I
D
D
D
D
D
= 250µA
GS
GS
S
F
= 5.8A
= 250µA
= 5.8A
= 4.7A
= 1.7A, V
= 1.7A
= 0V
= 0V, T
Following any rated
with V
www.irf.com
T
J
A
A
GS
= 55°C
RRM
= 25°C
= 70°C
= 0V
applied