IRF7353D1 International Rectifier, IRF7353D1 Datasheet - Page 3

• Manufacturer Part Number: IRF7353D1
• Description: MOSFET N-CH 30V 6.5A 8-SOIC
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7353D1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 32 mOhm @ 5.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.5A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 33nC @ 10V
• Input Capacitance (ciss) @ Vds: 650pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7353D1

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100
100
10
10
1
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
3.0
0.1
TOP
BOTTOM 3.0V
V
V
T = 25°C
GS
DS
VGS
10V
7.0V
5.5V
4.5V
4.0V
3.5V
15V
J
3.5
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
T = 150°C
J
4.0
1
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25°C
DS
J
Power Mosfet Characteristics
= 10V
3.0V
4.5
5.0
10
A
A
100
10
2.0
1.5
1.0
0.5
0.0
1
Fig 2. Typical Output Characteristics
0.1
-60 -40 -20
TOP
BOTTOM 3.0V
I =
Fig 4. Normalized On-Resistance
D
5.8A
V
DS
T , Junction Temperature ( C)
VGS
10V
7.0V
5.5V
4.5V
4.0V
3.5V
15V
J
, Drain-to-Source Voltage (V)
Vs. Temperature
0
20
40 60
1
20µs PULSE WIDTH
T = 150°C
J
IRF7353D1
80 100 120 140 160
3.0V
V
°
GS
=
10V
3
10
A