IRF7807D2 International Rectifier, IRF7807D2 Datasheet - Page 4
![MOSFET N-CH 30V 8.3A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7807D2
Manufacturer Part Number
IRF7807D2
Description
MOSFET N-CH 30V 8.3A 8-SOIC
Manufacturer
International Rectifier
Series
FETKY™r
Datasheet
1.IRF7807D2.pdf
(8 pages)
Specifications of IRF7807D2
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
25 mOhm @ 7A, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8.3A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 5V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7807D2TRPBF
Manufacturer:
IR
Quantity:
20 000
IRF7807D2
4
2.0
1.5
1.0
0.5
2000
1600
1200
800
400
-60 -40 -20
0
Fig 7. Normalized On-Resistance
1
Fig 5. Typical Capacitance Vs.
I D = 7.0A
V GS = 4.5V
Drain-to-Source Voltage
V
T J , Junction Temperature (°C )
DS
Vs. Temperature
V
C
C
C
, Drain-to-Source Voltage (V)
0
GS
iss
rss
oss
20
=
=
=
=
C rss
0V,
C
C
C
C oss
C iss
gs
gd
ds
40
+ C
+ C
10
60
f = 1MHz
gd ,
gd
80 100 120 140 160
C
ds
SHORTED
100
100
10
6
4
2
0
2.5
0
Fig 8. Typical Transfer Characteristics
I D = 7.0A
V DS = 16V
Fig 6. Typical Gate Charge Vs.
V GS , Gate-to-Source Voltage (V)
Gate-to-Source Voltage
Q G, Total Gate Charge (nC)
4
3.0
V DS = 10V
380µs PULSE WIDTH
8
T J = 25°C
T J = 150°C
www.irf.com
3.5
12