IRF7807D2 International Rectifier, IRF7807D2 Datasheet - Page 6
![MOSFET N-CH 30V 8.3A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7807D2
Manufacturer Part Number
IRF7807D2
Description
MOSFET N-CH 30V 8.3A 8-SOIC
Manufacturer
International Rectifier
Series
FETKY™r
Datasheet
1.IRF7807D2.pdf
(8 pages)
Specifications of IRF7807D2
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
25 mOhm @ 7A, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8.3A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 5V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7807D2TRPBF
Manufacturer:
IR
Quantity:
20 000
IRF7807D2
100
0.1
10
6
1
Fig. 12 - Typical Forward Voltage Drop
0.0
Tj = 125°C
Tj = 25°C
Forward Voltage Drop - V SD ( V )
0.2
Mosfet, Body Diode & Schottky Diode Characteristics
Characteristics
0.4
0.6
0.8
1.0
1.2
0.001
0.01
100
0.1
10
1
0
Reverse Current Vs. Reverse Voltage
Tj = 150°C
5
100°C
125°C
25°C
75°C
Fig. 13 - Typical Values of
50°C
Reverse Voltage - V R (V)
10
15
20
www.irf.com
25
30