IRLML2502TR International Rectifier, IRLML2502TR Datasheet - Page 2

• Manufacturer Part Number: IRLML2502TR
• Description: MOSFET N-CH 20V 4.2A SOT-23
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLML2502TR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 4.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.2A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 5V
• Input Capacitance (ciss) @ Vds: 740pF @ 15V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRLML2502TR; IRLML2502; IRLML2502; IRLML2502CT

‚
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics

Notes:
V
∆V
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
R
I
d(on)
d(off)
f
SM
r
S
rr
DSS
2
fs
GS(th)
GSS
(BR)DSS
SD
g
gs
gd
iss
oss
rss
rr
DS(on)
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤
(BR)DSS
max. junction temperature. ( See fig. 11 )
/∆T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Parameter
Parameter
J
= 25°C (unless otherwise specified)
ƒ
Min. Typ. Max. Units
0.60 –––
Min. Typ. Max. Units
Surface mounted on FR-4 board, t ≤
–––
––– 0.035 0.045
––– 0.050 0.080
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
5.8
20
0.01
–––
–––
–––
–––
––– -100
–––
740
–––
8.0
1.8
1.7
7.5
8.6
10
54
26
90
66
16
–––
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
1.2
1.0
2.7
2.6
1.2
25
12
24
13
1.3
33
V/°C
nC
nC
pF
ns
V
Ω
V
S
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs ‚
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= 1.0A
= 4.0A
= 25°C, I
= 25°C, I
= 6Ω
= 10Ω ‚
= V
= 16V, V
= 0V, I
= 4.5V, I
= 2.5V, I
= 10V, I
= 16V, V
= -12V
= 12V
= 10V
= 5.0V ‚
= 10V
= 0V
= 15V
GS
Conditions
, I
D
S
F
D
D
Conditions
= 250µA
D
D
GS
GS
= 1.3A, V
= 1.3A
= 250µA
= 4.0A
= 4.2A ‚
= 3.6A ‚
= 0V
= 0V, T
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D
= 1mA
GS
J
= 70°C
= 0V
G
‚
D
S