IRLML2502TR International Rectifier, IRLML2502TR Datasheet - Page 3

• Manufacturer Part Number: IRLML2502TR
• Description: MOSFET N-CH 20V 4.2A SOT-23
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLML2502TR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 4.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.2A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 5V
• Input Capacitance (ciss) @ Vds: 740pF @ 15V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRLML2502TR; IRLML2502; IRLML2502; IRLML2502CT

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100
100
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
10
10
1
0.1
2.0
TOP
BOTTOM
V
V
DS
VGS
7.00V
5.00V
4.50V
3.50V
3.00V
2.70V
2.50V
2.25V
2.4
GS
, Drain-to-Source Voltage (V)
T = 25 C
J
, Gate-to-Source Voltage (V)
1
°
2.8
2.25V
T = 150 C
20µs PULSE WIDTH
T = 25 C
V
20µs PULSE WIDTH
3.2
J
J
DS
10
= 15V
°
°
3.6
100
4.0
100
10
2.0
1.5
1.0
0.5
0.0
1
0.1
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
-60 -40 -20
TOP
BOTTOM
I =
D
V
4.0A
DS
VGS
7.00V
5.00V
4.50V
3.50V
3.00V
2.70V
2.50V
2.25V
T , Junction Temperature ( C)
J
Vs. Temperature
, Drain-to-Source Voltage (V)
0
1
20 40 60
2.25V
20µs PULSE WIDTH
T = 150 C
J
80 100 120 140 160
10
°
V
°
GS
=
4.5V
3
100