IRF1404S International Rectifier, IRF1404S Datasheet - Page 3

MOSFET N-CH 40V 162A D2PAK

IRF1404S

Manufacturer Part Number
IRF1404S
Description
MOSFET N-CH 40V 162A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF1404S

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4 mOhm @ 95A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
162A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
200nC @ 10V
Input Capacitance (ciss) @ Vds
7360pF @ 25V
Power - Max
3.8W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF1404S

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF1404S
Manufacturer:
IR
Quantity:
5 220
Part Number:
IRF1404STRLPBF
0
www.irf.com
1000
1000
100
100
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
10
10
0.1
4.0
TOP
BOTTOM
V
V
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
5.0
GS
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
T = 25 C
J
1
6.0
°
4.5V
20µs PULSE WIDTH
T = 25 C
V
20µs PULSE WIDTH
7.0
J
DS
10
T = 175 C
= 25V
J
°
8.0
°
100
9.0
1000
100
Fig 2. Typical Output Characteristics
10
2.5
2.0
1.5
1.0
0.5
0.0
0.1
Fig 4. Normalized On-Resistance
-60 -40 -20 0
TOP
BOTTOM
I =
D
V
159A
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
T , Junction Temperature ( C)
Vs. Temperature
J
, Drain-to-Source Voltage (V)
1
20 40 60 80 100 120 140 160 180
IRF1404S/L
4.5V
20µs PULSE WIDTH
T = 175 C
J
10
°
V
°
GS
=
10V
3
100

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