IRF1404S International Rectifier, IRF1404S Datasheet - Page 4

• Manufacturer Part Number: IRF1404S
• Description: MOSFET N-CH 40V 162A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF1404S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 mOhm @ 95A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 162A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 200nC @ 10V
• Input Capacitance (ciss) @ Vds: 7360pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF1404S

IRF1404S/L
4
12000
10000
8000
6000
4000
2000
1000
100
10
0
1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0.4
1
T = 175 C
Drain-to-Source Voltage
J
V
V
DS
SD
0.8
Forward Voltage
V
C
C
C
°
, Drain-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
GS
iss
rss
oss
T = 25 C
=
=
=
=
J
C oss
C rss
C iss
0V,
C
C
C
1.2
gs
gd
ds
+ C
+ C
°
10
f = 1MHz
gd ,
gd
1.6
C
ds
SHORTED
V
2.0
GS
= 0 V
100
2.4
10000
1000
100
20
16
12
Fig 8. Maximum Safe Operating Area
10
8
4
0
1
0
1
Fig 6. Typical Gate Charge Vs.
I =
D
T
T
Single Pulse
C
J
= 25 C
= 175 C
95A
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
V
40
DS
Q , Total Gate Charge (nC)
°
°
G
, Drain-to-Source Voltage (V)
80
BY R
120
10
DS(on)
V
V
DS
DS
FOR TEST CIRCUIT
SEE FIGURE
= 32V
= 20V
www.irf.com
160
200
10us
100us
1ms
10ms
13
100
240