IRF1010NSTRR International Rectifier, IRF1010NSTRR Datasheet - Page 2

• Manufacturer Part Number: IRF1010NSTRR
• Description: MOSFET N-CH 55V 85A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF1010NSTRR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11 mOhm @ 43A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 85A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Input Capacitance (ciss) @ Vds: 3210pF @ 25V
• Power - Max: 180W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Source-Drain Ratings and Characteristics
IRF1010NS/IRF1010NL
Electrical Characteristics @ T

‚
ƒ
„
…
Notes:
I
I
V
R
V
g
Q
Q
Q
t
t
t
t
L
L
C
C
C
E
I
I
V
t
Q
t
DSS
GSS
SM
d(on)
r
d(off)
f
S
rr
on
V
2
fs
D
S
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
AS
SD
g
gs
gd
rr
Repetitive rating; pulse width limited by
Pulse width
This is a typical value at device destruction and
I
represents operation outside rated limits.
T
(BR)DSS
max. junction temperature. ( See fig. 11 )
R
Starting T
SD
J
G
= 25 , I
175°C
43A, di/dt
/ T
J
J
Drain-to-Source Leakage Current
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Internal Drain Inductance
Internal Source Inductance
= 25°C, L = 270µH
AS
400µs; duty cycle
= 43A, V
210A/µs, V
GS

Parameter
Parameter
=10V (See Figure 12)
DD
V
2%.
(BR)DSS
J
,
= 25°C (unless otherwise specified)
‚ˆ
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 1030…250†
Min. Typ. Max. Units
Min. Typ. Max. Units
†
‡
ˆ
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
2.0
55
32
–––
–––
–––
–––
–––
–––
application note #AN-994.
For recommended footprint and soldering techniques refer to
Intrinsic turn-on time is negligible (turn-on is dominated by L
This is a calculated value limited to T
Calculated continuous current based on maximum allowable
Uses IRF1010N data and test conditions.
junction temperature. Package limitation current is 75A.
0.058 –––
3210 –––
–––
–––
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
690
140
–––
–––
–––
220
4.5
13
76
39
48
7.5
69
–––
85
–––
–––
250
100
120
–––
–––
–––
–––
–––
–––
–––
100
230
4.0
1.3
11
25
19
41
290
‡
V/°C
m
nC
nH
mJ
nC
µA
nA
ns
pF
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
I
MOSFET symbol
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
integral reverse
D
D
AS
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
G
= 43A
= 43A
= 25°C, I
= 25°C, I
= 4.3A, L = 270µH
= 3.6
= 0V, I
= 10V, I
= V
= 25V, I
= 55V, V
= 44V, V
= 20V
= -20V
= 44V
= 10V, See Fig. 6 and 13
= 28V
= 10V, See Fig. 10 „
= 0V
= 25V
GS
, I
D
S
F
D
D
D
Conditions
= 250µA
GS
GS
J
Conditions
= 43A
= 43A, V
= 43A
= 250µA
= 43A„
= 175°C .
„ˆ
= 0V
= 0V, T
D
www.irf.com
ˆ
GS
= 1mA
„
J
ˆ
= 150°C
= 0V
G
ˆ
G
ˆ
S
„
+L
„ˆ
D
D
S
S
)
D