IRF1010NSTRR International Rectifier, IRF1010NSTRR Datasheet - Page 8

• Manufacturer Part Number: IRF1010NSTRR
• Description: MOSFET N-CH 55V 85A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF1010NSTRR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11 mOhm @ 43A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 85A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Input Capacitance (ciss) @ Vds: 3210pF @ 25V
• Power - Max: 180W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRF1010NS/IRF1010NL
D
Part Marking Information
D
8
2
2
N O TE S :
Pak
Pak Package Outline
1 D IM E N S IO N S A F T E R S O LD E R D IP .
2 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982.
3 C O N T R O LLIN G D IM E N S IO N : IN C H .
4 H E A TS IN K & LE A D D IM E N S IO N S D O N O T IN C LU D E B U R R S .
1.40 (.055)
1.78 (.070)
1.27 (.050)
3X
M A X.
5.08 (.200 )
1.40 (.055)
1.14 (.045)
10.54 (.415)
10.29 (.405)
1
IN TE R N A T IO N A L
- A -
L O T
2
A S S E M B L Y
R E C TIF IE R
3
L O G O
3X
C O D E
0.25 (.010)
0.93 (.037)
0.69 (.027)
15.49 (.610)
14.73 (.580)
M
B A M
9 B
F 5 3 0 S
4.69 (.185)
4.20 (.165)
5.28 (.208)
4.78 (.188)
9 2 4 6
0.55 (.022)
0.46 (.018)
1 M
LE A D A S S IG N M E N TS
1 - G A TE
2 - D R A IN
3 - S O U R C E
- B -
1.32 (.052)
1.22 (.048)
P A R T N U M B E R
2.79 (.110)
2.29 (.090)
D A TE C O D E
(Y Y W W )
Y Y = Y E A R
W W = W E E K
1 .39 (.055)
1 .14 (.045)
M IN IM U M R E C O M M E N D E D F O O TP R IN T
8.89 (.350)
2.08 (.082)
3.81 (.150)
A
2X
10.16 (.400)
R E F .
11.43 (.4 50)
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8.89 (.350)
2.54 (.100)
R E F .
2.61 (.103)
2.32 (.091)
6.47 (.255)
6.18 (.243)
17.78 (.700)
2X