SI4420DYTR International Rectifier, SI4420DYTR Datasheet - Page 2

MOSFET N-CH 30V 12.5A 8-SOIC

SI4420DYTR

Manufacturer Part Number
SI4420DYTR
Description
MOSFET N-CH 30V 12.5A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of SI4420DYTR

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
9 mOhm @ 12.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
12.5A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
78nC @ 10V
Input Capacitance (ciss) @ Vds
2240pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4420DYTR
Manufacturer:
INTTRNAT
Quantity:
20 000
Part Number:
SI4420DYTRPBF
Manufacturer:
International Rectifier
Quantity:
25 338
Si4420DY
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
Notes:
V
V
g
I
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
R
I
GSS
d(on)
r
d(off)
f
S
SM
rr
DSS
V
fs
(BR)DSS
GS(th)
SD
iss
oss
rss
g
gs
gd
DS(on)
2
Repetitive rating; pulse width limited by
Pulse width
When mounted on FR4 Board, t 10 sec
(BR)DSS
max. junction temperature.
/ T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Diode Conduction)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
300µs; duty cycle
Parameter
Parameter
2%.
J
= 25°C (unless otherwise specified)
R
Starting T
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
––– 0.028 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 2240 –––
––– 1100 –––
–––
–––
–––
–––
1.0
30
G
= 25 , I
–––
–––
––– 0.009
––– 0.013
–––
–––
–––
––– -100
–––
150
–––
–––
8.7
29
52
12
15
10
55
47
52
J
= 25°C, L = 13mH
AS
–––
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
1.0
5.0
50
1.1
2.3
78
78
= 8.9A. (See Figure 15)
V/°C
µA
nA
nC
ns
pF
ns
V
V
S
V
A
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz, See Fig. 5
MOSFET symbol
showing the
p-n junction diode.
T
T
integral reverse
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
G
D
GS
DS
= 12.5A
= 1.0A
= 25°C, I
= 25°C, I
= 6.0
= 15 ,
= V
= 15V, I
= 30V, V
= 30V, V
= 15V
= 15V
= 0V, I
= 10V, I
= 4.5V, I
= -20V
= 20V
= 10V, See Fig. 6
= 15V
= 0V
GS
Conditions
, I
D
S
F
D
D
D
Conditions
D
= 250µA
GS
GS
= 2.3A, V
= 2.3A
= 250µA
= 12.5A
= 12.5A
= 10.5A
= 0V
= 0V, T
D
www.irf.com
= 1mA
GS
J
= 55°C
= 0V
G
D
S

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