SI4420DYTR International Rectifier, SI4420DYTR Datasheet - Page 6

• Manufacturer Part Number: SI4420DYTR
• Description: MOSFET N-CH 30V 12.5A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of SI4420DYTR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 12.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 12.5A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 78nC @ 10V
• Input Capacitance (ciss) @ Vds: 2240pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Si4420DY
Fig 14. Typical Threshold Voltage Vs.Temperature
6
0 . 2 0
0 . 1 6
0 . 1 2
0 . 0 8
0 . 0 4
0 . 0 0
Fig 12. Typical On-Resistance Vs. Drain
3.0
2.5
2.0
1.5
1.0
0
-60
-20
1 0
I , D rain C urren t (A )
D
T J , Temperature (°C)
20
Current
2 0
V
V
G S
G S
60
= 10V
= 4.5V
3 0
100
I D = 250µA
4 0
140
5 0
180
A
Fig 13. Typical On-Resistance Vs. Gate
0.012
0.010
0.008
0.006
1000
800
600
400
200
0
4.0
25
Fig 15. Maximum Avalanche Energy
Starting T , Junction Temperature ( C)
V GS, Gate -to -Source Voltage (V)
5.0
50
Vs. Drain Current
Voltage
J
6.0
75
7.0
100
I D = 12.5A
8.0
TOP
BOTTOM
www.irf.com
125
9.0
°
4.0A
7.1A
8.9A
I D
10.0
150