IRF7700 International Rectifier, IRF7700 Datasheet

MOSFET P-CH 20V 8.6A 8-TSSOP

IRF7700

Manufacturer Part Number
IRF7700
Description
MOSFET P-CH 20V 8.6A 8-TSSOP
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7700

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
15 mOhm @ 8.6A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
8.6A
Vgs(th) (max) @ Id
1.2V @ 250µA
Gate Charge (qg) @ Vgs
89nC @ 5V
Input Capacitance (ciss) @ Vds
4300pF @ 15V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
8-TSSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7700
Manufacturer:
SIL
Quantity:
6 425
Description
HEXFET
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design , that Inter-
national Rectifier is well known for,
signer with an extremely efficient and reliable device
for use in battery and load management.
The TSSOP-8 package, has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium.
The low profile (<1.1mm) of the TSSOP-8 will allow it to fit
easily into extremely thin application environments such
as portable electronics and PCMCIA cards.
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
V
I
I
I
P
P
V
T
R
D
D
DM
J,
DS
D
D
GS
@ T
@ T
JA
P-Channel MOSFET
Ultra Low On-Resistance
Very Small SOIC Package
Low Profile (< 1.1mm)
Available in Tape & Reel
@T
@T
T
STG
C
C
C
C
®
= 25°C
= 70°C
= 25°C
= 70°C
power MOSFETs from International Rectifier
Drain- Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Power Dissipation
Power Dissipation
Parameter
Parameter
provides the de-
GS
GS
@ -4.5V
@ -4.5V
2
3
4
1
1 = D
2 = S
3 = S
4 = G
V
-20V
DSS
G
D
S
HEXFET
0.015@V
0.024@V
8 = D
7 = S
6 = S
5 = D
-55 to + 150
R
Max.
8
7
6
5
Max.
DS(on)
±8.6
±6.8
0.96
0.01
±68
± 12
83
-20
1.5
®
GS
GS
IRF7700
Power MOSFET
max
= -4.5V
= -2.5V
TSSOP-8
PD - 93894A
-8.6A
-7.3A
Units
Units
I
W/°C
°C/W
D
W
°C
V
A
V
1
6/19/00

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IRF7700 Summary of contents

Page 1

... Linear Derating Factor V Gate-to-Source Voltage Junction and Storage Temperature Range J, STG Thermal Resistance Parameter R Maximum Junction-to-Ambient JA www.irf.com V DSS -20V provides the de -4. -4. 93894A IRF7700 ® HEXFET Power MOSFET R max I DS(on) D 0.015@V = -4.5V -8.6A GS 0.024@V = -2.5V -7. TSSOP-8 Max. Units -20 V ±8.6 ±6.8 A ± ...

Page 2

... IRF7700 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...

Page 3

... TOP BOTTOM 10 ° 1 100 0.1 -V Fig 2. Typical Output Characteristics 2 1.5 1.0 0.5 0.0 2.8 3.2 -60 -40 -20 Fig 4. Normalized On-Resistance IRF7700 VGS -15V -10V -4.5V -3.0V -2.7V -2.5V -2.25V -2.0V -2.0V 20µs PULSE WIDTH ° 150 Drain-to-Source Voltage ( 4.5V ...

Page 4

... IRF7700 2000 1MHz iss rss 1600 oss iss 1200 800 400 C oss C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 10 ° 150 ° 0.1 0.0 0.5 1.0 -V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage SHORTED 100 0 Fig 6 ...

Page 5

... Fig 10. Typical Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com R G Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V GS 10% 125 150 ° 90 Fig 10b. Switching Time Waveforms 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec) 1 IRF7700 D.U. µ d(on) r d(off) f ...

Page 6

... IRF7700 0.026 0.022 0.018 -8.6A 0.014 0.010 2.0 4.0 6.0 -V GS, Gate -to -Source Voltage (V) Fig 11. Typical On-Resistance Vs. Gate Voltage Charge Fig 13a. Basic Gate Charge Waveform 6 0.06 0. -2.5V 0.02 0.00 8.0 10.0 0 Fig 12. Typical On-Resistance Vs. Drain Current Regulator Same Type as D.U.T. ...

Page 7

... Temperature (°C) Fig 14. Threshold Voltage Vs. Temperature www.irf.com -250µ 100 150 0.01 Fig 15. Typical Power Vs. Time IRF7700 0.10 1.00 10.00 100.00 Time (sec) 7 ...

Page 8

... IRF7700 TSSOP-8 Part Marking Information EXAMPLE: THIS IS AN IRF7702 LOT CODE (XX) XXYW PART NUMBER 7702 DAT E CODE EXAMPLES: 9503 = 5C 9532 = EF WORK WEEK 27-52, ALPHANUMERIC YEAR CODE (A,B, ...ET C.) TSSOP-8 Tape and Reel DAT E CODE (YW) TABLE 1 WORK WEEK 1-26, NUMERIC YEAR CODE (1,2, ....ETC.) ...

Page 9

... IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 www.irf.com IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel 011 451 0111 Data and specifications subject to change without notice. 6/00 IRF7700 9 ...

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