IRF7700 International Rectifier, IRF7700 Datasheet - Page 4

• Manufacturer Part Number: IRF7700
• Description: MOSFET P-CH 20V 8.6A 8-TSSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7700

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15 mOhm @ 8.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 8.6A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 89nC @ 5V
• Input Capacitance (ciss) @ Vds: 4300pF @ 15V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRF7700
4
2000
1600
1200
800
400
100
0.1
10
0
1
0.0
Fig 7. Typical Source-Drain Diode
1
Fig 5. Typical Capacitance Vs.
T = 150 C
J
-V
-V
Drain-to-Source Voltage
DS
SD
Forward Voltage
V
C
C
C
0.5
, Drain-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
GS
iss
rss
oss
C
C
°
C
iss
rss
oss
=
=
=
=
0V,
C
C
C
gs
gd
ds
T = 25 C
J
+ C
+ C
1.0
10
f = 1MHz
gd ,
gd
°
C
ds
1.5
SHORTED
V
GS
= 0 V
100
2.0
1000
100
0.1
10
Fig 8. Maximum Safe Operating Area
10
1
8
6
4
2
0
0.1
0
T
T
Single Pulse
I =
D
C
J
Fig 6. Typical Gate Charge Vs.
= 25 C
= 150 C
OPERATION IN THIS AREA LIMITED
-4.1A
-V
Gate-to-Source Voltage
4
DS
°
Q , Total Gate Charge (nC)
°
G
, Drain-to-Source Voltage (V)
1
8
BY R
12
DS(on)
V
DS
FOR TEST CIRCUIT
SEE FIGURE
=-16V
10
16
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10us
100us
1ms
10ms
20
13
100
24