IRF7726TR International Rectifier, IRF7726TR Datasheet
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IRF7726TR
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IRF7726TR Summary of contents
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... This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an extremely efficient and reliable device for battery and load management. The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline ...
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IRF7726 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...
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PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 ° 150 ° ...
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IRF7726 3200 1MHz iss 2800 rss oss 2400 C iss 2000 1600 1200 ...
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T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 0. SINGLE PULSE (THERMAL RESPONSE) ...
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IRF7726 0.070 0.060 0.050 0.040 -7.0A 0.030 0.020 0.010 2.0 3.0 4.0 5.0 6.0 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage ...
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Temperature ( °C ) Fig 15. Typical Vgs(th) Vs. Junction Temperature www.irf.com 150 120 -250µ 100 125 150 ...
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IRF7726 Package Outline Micro-8 Outline Dimensions are shown in millimeters (inches (. ...
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Tape & Reel Information Micro-8 Dimensions are shown in millimeters (inches ...