IRF7726TR International Rectifier, IRF7726TR Datasheet

IRF7726TR

Manufacturer Part Number

IRF7726TR

Description

MOSFET P-CH 30V 7A MICRO8

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF7726TR.pdf (9 pages)

Specifications of IRF7726TR

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

26 mOhm @ 7A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

2.5V @ 250µA

Gate Charge (qg) @ Vgs

69nC @ 10V

Input Capacitance (ciss) @ Vds

2204pF @ 25V

Power - Max

1.79W

Mounting Type

Surface Mount

Package / Case

Micro8™

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF7726TRPBF

Manufacturer:

Quantity:

20 000

Current page: 1 of 9
Download datasheet (96Kb)

Thermal Resistance

Absolute Maximum Ratings

Description

www.irf.com

HEXFET

fier utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the ruggedized device design,

that International Rectifier is well known for, provides

the designer with an extremely efficient and reliable

device for battery and load management.

The new Micro8 package, with half the footprint area

of the standard SO-8, provides the smallest footprint

available in an SOIC outline. This makes the Micro8

an ideal device for applications where printed circuit

board space is at a premium. The low profile (<1.2mm)

of the Micro8 will allow it to fit easily into extremely thin

application environments such as portable electronics

and PCMCIA cards.

@ T

, T

P-Channel MOSFET

Ultra Low On-Resistance

Very Small SOIC Package

Low Profile (< 1.2mm)

Available in Tape & Reel

STG

= 25°C

= 70°C

= 25°C

= 70°C

Power MOSFETs from International Recti-

Drain-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Maximum Power Dissipation

Junction and Storage Temperature Range

Maximum Junction-to-Ambient

Linear Derating Factor

Gate-to-Source Voltage

Parameter

@ -10V

-30V

DSS

T op V ie w

HEXFET

0.040@V

0.026@V

-55 to +150

Max.

DS(on)

Max.

1.79

1.14

0.01

-7.0

-5.7

-30

-28

±20

IRF7726

Power MOSFET

max

= -4.5V

= -10V

MICRO-8

PD -94064

7.0A

6.0A

Units

W/°C

°C/W

°C

12/21/00

Related parts for IRF7726TR

IRF7726TR Summary of contents

Page 1

... This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an extremely efficient and reliable device for battery and load management. The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline ...

Page 2

IRF7726 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

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IRF7726TR International Rectifier, IRF7726TR Datasheet

IRF7726TR

Specifications of IRF7726TR

Available stocks

Related parts for IRF7726TR

IRF7726TR Summary of contents

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Page 9

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