IRF7726TR International Rectifier, IRF7726TR Datasheet - Page 3
![MOSFET P-CH 30V 7A MICRO8](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7726TR
Manufacturer Part Number
IRF7726TR
Description
MOSFET P-CH 30V 7A MICRO8
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7726TR.pdf
(9 pages)
Specifications of IRF7726TR
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
26 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
69nC @ 10V
Input Capacitance (ciss) @ Vds
2204pF @ 25V
Power - Max
1.79W
Mounting Type
Surface Mount
Package / Case
Micro8™
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7726TRPBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
0.01
100
100
0.1
0.1
10
10
1
Fig 1. Typical Output Characteristics
1
Fig 3. Typical Transfer Characteristics
2.0
0.1
T = 150 C
J
-V
GS
-V DS , Drain-to-Source Voltage (V)
°
3.0
T = 25 C
, Gate-to-Source Voltage (V)
J
1
°
20µs PULSE WIDTH
Tj = 25°C
4.0
-2.5V
V
20µs PULSE WIDTH
DS
10
= -15V
5.0
TOP
BOTTOM -2.5V
VGS
-10.0V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
6.0
100
100
0.1
10
2.0
1.5
1.0
0.5
0.0
1
0.1
-60 -40 -20
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
I =
D
-7.0A
-V DS , Drain-to-Source Voltage (V)
T , Junction Temperature ( C)
J
Vs. Temperature
0
1
20 40 60 80 100 120 140 160
20µs PULSE WIDTH
Tj = 150°C
-2.5V
IRF7726
10
TOP
BOTTOM -2.5V
V
GS
°
=
VGS
-10.0V
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
3
100