IRL3715 International Rectifier, IRL3715 Datasheet

MOSFET N-CH 20V 54A TO-220AB

IRL3715

Manufacturer Part Number
IRL3715
Description
MOSFET N-CH 20V 54A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRL3715

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
14 mOhm @ 26A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
54A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 4.5V
Input Capacitance (ciss) @ Vds
1060pF @ 10V
Power - Max
3.8W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRL3715

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRL3715
Manufacturer:
IR
Quantity:
5 000
Part Number:
IRL3715
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRL3715L
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
IRL3715L
Quantity:
50 000
Part Number:
IRL3715PBF
Manufacturer:
International Rectifier
Quantity:
135
Part Number:
IRL3715S
Manufacturer:
IR
Quantity:
5 000
Part Number:
IRL3715S
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRL3715ZCSTRL
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRL3715ZL
Quantity:
50 000
Thermal Resistance
Absolute Maximum Ratings
Benefits
www.irf.com
Notes
Applications
R
R
R
R
Symbol
V
V
I
I
I
P
P
T
D
D
DM
J
DS
GS
D
D
JC
CS
JA
JA
and Current
@ T
@ T
, T
Converters with Synchronous Rectification
for Telecom and Industrial Use
Ultra-Low Gate Impedance
Very Low R
Fully Characterized Avalanche Voltage
High Frequency Isolated DC-DC
High Frequency Buck Converters for
@T
@T
Computer Processor Power
STG
C
C
C
A
= 25°C
= 100°C
= 25°C
= 25°C
through
DS(on)
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB mount)
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Junction and Storage Temperature Range
Linear Derating Factor
at 4.5V V
are on page 11
Parameter
Parameter
GS
SMPS MOSFET
GS
GS
@ 10V
@ 10V
V
TO-220AB
IRL3715
DSS
20V
Typ.
0.50
–––
–––
–––
R
HEXFET
DS(on)
-55 to + 175
14m
IRL3715S
Max.
± 20
54
38
210
0.48
D
3.8
71
20
2
max
Pak
®
Power MOSFET
Max.
–––
2.1
62
40
IRL3715S
IRL3715L
PD - 94194A
IRL3715
IRL3715L
TO-262
54A
I
D
Units
Units
°C/W
W/°C
°C
W
W
V
A
V
1
6/5/01

Related parts for IRL3715

IRL3715 Summary of contents

Page 1

... IRL3715 @ 10V GS @ 10V 94194A IRL3715 IRL3715S IRL3715L ® HEXFET Power MOSFET R max I DS(on) D 14m 54A 2 D Pak TO-262 IRL3715S IRL3715L Max. Units 20 ± 210 71 W 3.8 W 0.48 W/°C - 175 °C Typ. Max. Units ––– 2.1 0.50 ––– ...

Page 2

... IRL3715/S/L Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Dynamic @ T = 25°C (unless otherwise specified) ...

Page 3

... Fig 2. Typical Output Characteristics 2 2.0 1.5 ° J 1.0 0.5 = 15V 0.0 7.0 8.0 -60 -40 -20 0 Fig 4. Normalized On-Resistance IRL3715/S/L VGS 15V 10V 4.5V 3.5V 3.3V 3.0V 2.7V 2.5V 2.5V 20µs PULSE WIDTH ° 175 Drain-to-Source Voltage (V) DS 52A ...

Page 4

... IRL3715/S/L 10000 0V, C iss = rss = oss = Ciss 1000 Coss Crss 100 Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 ° 175 0.1 0.2 0.7 1.2 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage MHZ SHORTED 100 0 Fig 6. Typical Gate Charge Vs. ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com R G 4.5V Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 150 175 ° 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 t , Rectangular Pulse Duration (sec) 1 IRL3715/S D.U. µ d(off ...

Page 6

... IRL3715/S Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 240 1 5V 200 160 + - 120 Starting T , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Fig 13b. Gate Charge Test Circuit I D TOP 8 ...

Page 7

... Ground Plane Low Leakage Inductance Current Transformer - - + dv/dt controlled Driver same type as D.U.T. I controlled by Duty Factor "D" SD D.U.T. - Device Under Test P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Body Diode Forward Drop Ripple 5% ® Power MOSFETs IRL3715/S =10V ...

Page 8

... IRL3715/S/L TO-220AB Package Outline Dimensions are shown in millimeters (inches (. (. (. (. (. (. (. (. (. (. (. & TO-220AB Part Marking Information (. (. (. (. 6 6 & (. (. (. (. (. (. www.irf.com ...

Page 9

... D Pak Package Outline 2 D Pak Part Marking Information www.irf.com IRL3715/S/L 9 ...

Page 10

... IRL3715/S/L TO-262 Package Outline TO-262 Part Marking Information 10 www.irf.com ...

Page 11

... This is only applied to TO-220A package Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. Visit us at www.irf.com for sales contact information. 6/01 IRL3715/S .42 (. ...

Page 12

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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