IRL3715 International Rectifier, IRL3715 Datasheet - Page 4

• Manufacturer Part Number: IRL3715
• Description: MOSFET N-CH 20V 54A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL3715

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14 mOhm @ 26A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 54A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1060pF @ 10V
• Power - Max: 3.8W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRL3715

IRL3715/S/L
10000
4
1000
100
0.1
100
10
10
1
0.2
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
T = 175 C
Drain-to-Source Voltage
J
V
SD
V DS , Drain-to-Source Voltage (V)
0.7
,Source-to-Drain Voltage (V)
Forward Voltage
°
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
1.2
Coss
Ciss
Crss
10
T = 25 C
J
f = 1 MHZ
°
1.7
V
GS
SHORTED
= 0 V
2.2
100
1000
100
10
14
12
10
Fig 8. Maximum Safe Operating Area
8
6
4
2
0
1
0
Fig 6. Typical Gate Charge Vs.
1
I =
D
Tc = 25°C
Tj = 175°C
Single Pulse
21A
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
Q , Total Gate Charge (nC)
5
G
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
V
V
10
DS
DS
FOR TEST CIRCUIT
= 16V
= 10V
15
SEE FIGURE
www.irf.com
1msec
10msec
100µsec
20
13
100
25