IRF7807VD2 International Rectifier, IRF7807VD2 Datasheet - Page 3

• Manufacturer Part Number: IRF7807VD2
• Description: MOSFET N-CH 30V 8.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7807VD2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 4.5V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7807VD2

Power MOSFET Selection for DC/DC
Converters
Control FET
in the switching elements of the circuit - Q1 and Q2.
Power losses in the high side switch Q1, also called
the Control FET, are impacted by the R
MOSFET, but these conduction losses are only about
one half of the total losses.
by;
P
and Q
charge that is included in all MOSFET data sheets.
The importance of splitting this gate-source charge
into two sub elements, Q
Fig 1.
the gate driver between the time that the threshold
voltage has been reached (t1) and the time the drain
current rises to I
age begins to change. Minimizing Q
tor in reducing switching losses in Q1.
put capacitance of the MOSFET during every switch-
ing cycle. Figure 2 shows how Q
parallel combination of the voltage dependant (non-
linear) capacitance’s C
the power supply input buss voltage.
www.irf.com
P
loss
loss
Special attention has been given to the power losses
Power losses in the control switch Q1 are given
This can be expanded and approximated by;
This simplified loss equation includes the terms Q
Q
Q
Q
gs2
gs2
oss
= P
oss
is the charge that must be supplied to the out-
indicates the charge that must be supplied by
is a sub element of traditional gate-source
I
Q
which are new to Power MOSFET data sheets.
I
Q
rms
conduction
g
2
oss
2
Q
i
V
g
gd
g
R
V
dmax
ds(on )
in
+ P
V
f
(t2) at which time the drain volt-
in
f
switching
ds
gs1
f
and C
and Q
+ P
dg
I
gs2
oss
drive
when multiplied by
, can be seen from
gs2
Q
is formed by the
+ P
i
gs2
g
is a critical fac-
output
ds(on)
V
in
of the
f
gs2
Figure 1: Typical MOSFET switching waveform
Synchronous FET
by;
*dissipated primarily in Q1.
P
P
loss
loss
The power loss equation for Q2 is approximated
t0
V
GTH
P
I
conduction
Q
rms
Q
t1
g
2
oss
2
V
t2
R
g
V
ds(on)
in
P
Drain Current
drive
f
IRF7807VD2
t3
f
P
output
*
Drain Voltage
Q
rr
Gate Voltage
V
in
4
1
2
f
3