IRF7807VD2 International Rectifier, IRF7807VD2 Datasheet - Page 7

• Manufacturer Part Number: IRF7807VD2
• Description: MOSFET N-CH 30V 8.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7807VD2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 4.5V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7807VD2

IRF7807VD2
MOSFET , Body Diode & Schottky Diode Characteristics
100
100
Tj = 150°C
10
125°C
100°C
1
Tj = 125°C
75°C
Tj = 25°C
0.1
50°C
10
0.01
25°C
0.001
0
5
10
15
20
25
30
Reverse Voltage - V R (V)
Fig. 12 - Typical Values of
1
Reverse Current Vs. Reverse Voltage
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Forward Voltage Drop - V SD ( V )
Fig. 11 - Typical Forward Voltage Drop
Characteristics
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