IRF7807VD1 International Rectifier, IRF7807VD1 Datasheet - Page 2

• Manufacturer Part Number: IRF7807VD1
• Description: MOSFET N-CH 30V 8.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7807VD1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 4.5V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7807VD1

IRF7807VD1
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Total Gate Charge*
Pre-Vth Gate-Source Charge
Post-Vth Gate-Source Charge
Gate-to-Drain Charge
Switch Charge (Q
Output Charge*
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Notes:
Electrical Characteristics
Diode Characteristics
2

‚
ƒ
„
…
†
*
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board
50% Duty Cycle, Rectangular
Typical values of R
θ
Parameter
Parameter
Device are 100% tested to these parameters.
gs2
+ Q
gd
f
)
f
DS
(on) measured at V
Symbol Min
Symbol Min
BV
R
V
I
I
Q
Q
Q
Q
Q
Q
R
t
t
t
t
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
GS(th)
SD
DS(on)
G
G
GS1
GS2
GD
SW
OSS
rr
DSS
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.0
0.9
30
GS
= 4.5V, Q
Typ Max Units
Typ Max Units
–––
–––
–––
–––
–––
––– ±100
–––
–––
–––
9.5
2.3
1.0
2.4
3.4
6.3
1.2
2.2
17
12
11
51
51
G
16.8
0.39
, Q
–––
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
3.0
2.0
5.2
2.8
0.5
25
20
14
SW
and Q
mΩ
mA
µA
µA
nA
nC
nC
ns
ns
Ω
V
V
V
OSS
V
V
V
V
V
V
V
V
I
V
V
V
V
Resistive Load
T
T = 125°C, I
di/dt = 700A/µs
V
T
di/dt = 100A/µs
D
J
J
GS
GS
DS
DS
DS
DS
GS
DS
DS
DS
DD
GS
DD
measured at V
= 7.0A
= 25°C, I
= 25°C, I
= 0V, I
= 4.5V, I
= V
= 30V, V
= 24V, V
= 24V, V
= ± 20V
= 4.5V
= 16V
= 16V, V
= 16V, I
= 5V, R
= 16V, V
GS
, I
D
Conditions
Conditions
D
S
S
G
D
S
= 250µA
D
GS
GS
GS
GS
GS
= 1.0A ,V
= 7.0A ,V
= 250µA
= 2Ω
= 1.0A, V
= 7.0V
= 7.0A
GS
= 0V
= 0V
= 0V, T
= 0
= 0V, I
= 5.0V, I
www.irf.com
d
D
GS
DS
J
GS
= 15A
= 100°C
F
= 16V
= 0V
= OV
= 7.0A.
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