IRF7807VD1 International Rectifier, IRF7807VD1 Datasheet - Page 6
![MOSFET N-CH 30V 8.3A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7807VD1
Manufacturer Part Number
IRF7807VD1
Description
MOSFET N-CH 30V 8.3A 8-SOIC
Manufacturer
International Rectifier
Series
FETKY™r
Datasheet
1.IRF7807VD1.pdf
(9 pages)
Specifications of IRF7807VD1
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
25 mOhm @ 7A, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8.3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 4.5V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7807VD1
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7807VD1
Manufacturer:
STM
Quantity:
2 773
IRF7807VD1
6
100
0.1
10
0.00001
1
D = 0.50
Figure 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.20
0.10
0.05
0.02
0.01
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
5
4
3
2
1
0
Fig 10. Typical Gate Charge Vs.
0
I =
D
Gate-to-Source Voltage
0.001
7.0A
t , Rectangular Pulse Duration (sec)
1
2
Q , Total Gate Charge (nC)
G
4
V
DS
= 16V
0.01
6
8
10
1. Duty factor D = t / t
2. Peak T = P
Notes:
0.1
12
J
DM
x Z
1
thJA
P
2
DM
1
+ T
www.irf.com
A
t
1
t
2
10