IRLR3714Z International Rectifier, IRLR3714Z Datasheet - Page 4

• Manufacturer Part Number: IRLR3714Z
• Description: MOSFET N-CH 20V 37A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR3714Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 37A
• Vgs(th) (max) @ Id: 2.55V @ 250µA
• Gate Charge (qg) @ Vgs: 7.1nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 560pF @ 10V
• Power - Max: 35W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRLR3714Z

4
1000.0
10000
100.0
1000
10.0
100
10
1.0
0.1
Fig 5. Typical Capacitance vs.
Fig 7. Typical Source-Drain Diode
0.0
1
Drain-to-Source Voltage
T J = 175°C
V DS , Drain-to-Source Voltage (V)
V SD , Source-toDrain Voltage (V)
Forward Voltage
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
0.5
Ciss
Coss
Crss
T J = 25°C
1.0
f = 1 MHZ
10
1.5
V GS = 0V
2.0
100
1000
100
0.1
12
10
10
Fig 8. Maximum Safe Operating Area
8
6
4
2
0
1
0
Fig 6. Typical Gate Charge vs.
0
Tc = 25°C
Tj = 175°C
Single Pulse
I D = 12A
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
2
Q G Total Gate Charge (nC)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
4
1
V DS = 20V
VDS= 10V
6
10
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8
100µsec
1msec
10msec
10
100
12