IRL3714Z International Rectifier, IRL3714Z Datasheet - Page 4

• Manufacturer Part Number: IRL3714Z
• Description: MOSFET N-CH 20V 36A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL3714Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 16 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 36A
• Vgs(th) (max) @ Id: 2.55V @ 250µA
• Gate Charge (qg) @ Vgs: 7.2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 550pF @ 10V
• Power - Max: 35W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRL3714Z

1000.00
100.00
4
10.00
10000
1000
1.00
100
10
Fig 5. Typical Capacitance vs.
Fig 7. Typical Source-Drain Diode
0.0
1
Drain-to-Source Voltage
C oss
C iss
C rss
T J = 175°C
V DS , Drain-to-Source Voltage (V)
V SD , Source-to-Drain Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
0.5
Forward Voltage
T J = 25°C
1.0
f = 1 MHZ
10
1.5
V GS = 0V
2.0
100
2.5
1000
100
6.0
5.0
4.0
3.0
2.0
1.0
0.0
10
Fig 8. Maximum Safe Operating Area
1
0
0
Fig 6. Typical Gate Charge vs.
Tc = 25°C
Tj = 175°C
Single Pulse
I D = 14A
Gate-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
1
Q G Total Gate Charge (nC)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
2
1
V DS = 16V
V DS = 10V
3
4
10
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5
100µsec
10msec
1msec
6
100
7