IRL3714Z International Rectifier, IRL3714Z Datasheet - Page 5

• Manufacturer Part Number: IRL3714Z
• Description: MOSFET N-CH 20V 36A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL3714Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 16 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 36A
• Vgs(th) (max) @ Id: 2.55V @ 250µA
• Gate Charge (qg) @ Vgs: 7.2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 550pF @ 10V
• Power - Max: 35W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRL3714Z

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40
35
30
25
20
15
10
0.01
0.1
5
0
10
Fig 9. Maximum Drain Current vs.
1
1E-006
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
50
0.20
0.10
0.05
0.01
Case Temperature
0.02
T C , Case Temperature (°C)
75
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
100
125
150
t 1 , Rectangular Pulse Duration (sec)
0.0001
175
τ
J
τ
J
τ
Fig 10. Threshold Voltage vs. Temperature
1
Ci= τi/Ri
τ
1
Ci= τi/Ri
3.0
2.5
2.0
1.5
1.0
-75 -50 -25
R
1
R
0.001
1
τ
2
τ
R
2
2
R
I D = 250µA
2
T J , Temperature ( °C )
0
R
τ
3
3
R
τ
3
25
3
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τ
C
τ
50
Ri (°C/W)
1.292
2.337
0.652
0.01
75 100 125 150 175 200
0.000135
0.000882
0.005472
τi (sec)
5
0.1