IRF540Z International Rectifier, IRF540Z Datasheet - Page 3
![MOSFET N-CH 100V 36A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRF540Z
Manufacturer Part Number
IRF540Z
Description
MOSFET N-CH 100V 36A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF540ZPBF.pdf
(13 pages)
Specifications of IRF540Z
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
26.5 mOhm @ 22A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
36A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
63nC @ 10V
Input Capacitance (ciss) @ Vds
1770pF @ 25V
Power - Max
92W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF540Z
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF540Z
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
IRF540ZL
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRF540ZPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF540ZS
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
IRF540ZSPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF540ZSTRLPBF
Manufacturer:
ST
Quantity:
101
www.irf.com
1000
1000
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
100
100
10
10
1
1
4.0
0.1
TOP
BOTTOM
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
T J = 175°C
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
T J = 25°C
4.5V
5.0
1
60µs PULSE WIDTH
Tj = 25°C
V DS = 25V
60µs PULSE WIDTH
6.0
10
100
7.0
1000
Fig 4. Typical Forward Transconductance
Fig 2. Typical Output Characteristics
100
10
80
60
40
20
1
0
0.1
0
0
TOP
BOTTOM
V DS , Drain-to-Source Voltage (V)
I D, Drain-to-Source Current (A)
10
Vs. Drain Current
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1
1
20
V DS = 10V
380µs PULSE WIDTH
60µs PULSE WIDTH
Tj = 175°C
4.5V
30
T J = 175°C
10
10
T J = 25°C
40
3
100
100
50