IRF540Z International Rectifier, IRF540Z Datasheet - Page 6
![MOSFET N-CH 100V 36A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRF540Z
Manufacturer Part Number
IRF540Z
Description
MOSFET N-CH 100V 36A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF540ZPBF.pdf
(13 pages)
Specifications of IRF540Z
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
26.5 mOhm @ 22A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
36A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
63nC @ 10V
Input Capacitance (ciss) @ Vds
1770pF @ 25V
Power - Max
92W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF540Z
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF540Z
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
IRF540ZL
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRF540ZPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF540ZS
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
IRF540ZSPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF540ZSTRLPBF
Manufacturer:
ST
Quantity:
101
0
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
6
Fig 13a. Basic Gate Charge Waveform
I
AS
V
G
R G
20V
V
V DS
GS
Q
1K
GS
t p
t p
I AS
D.U.T
0.01 Ω
L
Charge
Q
Q
V
GD
G
DUT
(BR)DSS
L
15V
DRIVER
+
-
VCC
V DD
A
Fig 14. Threshold Voltage Vs. Temperature
4.0
3.5
3.0
2.5
2.0
1.5
180
160
140
120
100
80
60
40
20
Fig 12c. Maximum Avalanche Energy
0
-75 -50 -25
25
Starting T J , Junction Temperature (°C)
50
Vs. Drain Current
T J , Temperature ( °C )
0
75
25
50
100
75
I D = 250µA
TOP
BOTTOM 20A
www.irf.com
125
100 125 150 175
150
I D
14A
8.3A
175