IRF3805S International Rectifier, IRF3805S Datasheet

MOSFET N-CH 55V 75A D2PAK

IRF3805S

Manufacturer Part Number
IRF3805S
Description
MOSFET N-CH 55V 75A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF3805S

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.3 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
290nC @ 10V
Input Capacitance (ciss) @ Vds
7960pF @ 25V
Power - Max
330W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF3805S

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF3805S
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRF3805S-7P
Manufacturer:
IR
Quantity:
8 000
Part Number:
IRF3805S-7P
Manufacturer:
IR/INFINEON
Quantity:
20 000
Part Number:
IRF3805SPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF3805STRLPBF
Quantity:
9 000
Specifically designed for Automotive applications,
this HEXFET
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
l
l
l
l
l
Features
I
I
I
I
P
V
E
E
I
E
T
T
R
R
R
R
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
Description
D
D
D
DM
AR
J
STG
D
GS
AS (Thermally limited)
AS
AR
θJC
θCS
θJA
θJA
@ T
@ T
@ T
@T
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
(Tested )
C
C
C
C
= 25°C
= 100°C
= 25°C
= 25°C
®
Power MOSFET utilizes the latest
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Junction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount)
Ã
AUTOMOTIVE MOSFET
Parameter
Parameter
i
GS
GS
GS
g
@ 10V
@ 10V
@ 10V
d
j
i
i
(Silicon Limited)
(Package limited)
G
TO-220AB
IRF3805
h
HEXFET
See Fig.12a, 12b, 15, 16
300 (1.6mm from case )
Typ.
0.50
–––
–––
–––
10 lbf
S
D
IRF3805S
-55 to + 175
D
2
y
Max.
Pak
in (1.1N
± 20
220
160
890
330
730
940
2.2
75
®
R
Power MOSFET
DS(on)
V
y
m)
Max.
DSS
I
0.45
–––
D
62
40
IRF3805S
IRF3805L
= 75A
PD - 95880C
IRF3805
= 3.3mΩ
= 55V
IRF3805L
TO-262
Units
Units
W/°C
°C/W
mJ
mJ
°C
W
A
V
A
1

Related parts for IRF3805S

IRF3805S Summary of contents

Page 1

... Parameter 95880C IRF3805 IRF3805S IRF3805L ® HEXFET Power MOSFET 55V DSS R = 3.3mΩ DS(on 75A Pak TO-262 IRF3805S IRF3805L Max. Units 220 160 A 75 890 330 W 2.2 W/°C ± 730 mJ 940 See Fig.12a, 12b 175 °C 300 (1.6mm from case ) lbf in (1 ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ΔV /ΔT Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage ...

Page 3

PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 175°C 100.0 10 25°C 1 ...

Page 4

0V MHZ C iss = SHORTED 12000 C rss = oss = 10000 Ciss 8000 6000 4000 ...

Page 5

LIMITED BY PACKAGE 200 160 120 100 Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 0.001 ...

Page 6

D.U 20V V GS 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms ...

Page 7

Duty Cycle = Single Pulse 1000 0.01 100 0.05 0. 1.0E-06 1.0E-05 Fig 15. Typical Avalanche Current Vs.Pulsewidth 800 TOP Single Pulse BOTTOM 1% Duty Cycle 75A 600 400 200 ...

Page 8

D.U.T + ƒ • • - • + ‚ -  • • • SD • Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. ...

Page 9

TO-220AB packages are not recommended for Surface Mount Application. EXAMPLE: T HIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 2000 EMBLY LINE "C" Note: "P" in ass embly line position ...

Page 10

T HIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 EMBLY LINE "L" Note: "P" in assembly line position indicates "Lead-Free" (Dimensions are shown ...

Page 11

TO-262 Package Outline TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 ASS EMBLED ON WW 19, 1997 ASS EMBLY LINE "C" Note: "P" in assembly line pos ition indicates "Lead-Free" OR www.irf.com ...

Page 12

TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. Notes:  Repetitive rating; ...

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