IRF3805S International Rectifier, IRF3805S Datasheet - Page 3

• Manufacturer Part Number: IRF3805S
• Description: MOSFET N-CH 55V 75A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3805S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.3 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 290nC @ 10V
• Input Capacitance (ciss) @ Vds: 7960pF @ 25V
• Power - Max: 330W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF3805S

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1000.0
100.0
1000
10.0
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
100
1.0
0.1
10
1
4.0
0.1
T J = 175°C
V GS , Gate-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
5.0
T J = 25°C
1
4.5V
V DS = 20V
≤ 60μs PULSE WIDTH
6.0
≤ 60μs PULSE WIDTH
Tj = 25°C
10
TOP
BOTTOM
7.0
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
8.0
100
Fig 4. Typical Forward Transconductance
1000
Fig 2. Typical Output Characteristics
200
160
120
100
80
40
10
0
0.1
0
20
V DS , Drain-to-Source Voltage (V)
I D, Drain-to-Source Current (A)
Vs. Drain Current
40
4.5V
60
1
V DS = 10V
380μs PULSE WIDTH
80 100 120 140 160 180
≤ 60μs PULSE WIDTH
Tj = 175°C
10
TOP
BOTTOM
T J = 175°C
T J = 25°C
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
3
100