IRF7453PBF International Rectifier, IRF7453PBF Datasheet

MOSFET N-CH 250V 2.2A 8-SOIC

IRF7453PBF

Manufacturer Part Number
IRF7453PBF
Description
MOSFET N-CH 250V 2.2A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7453PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
230 mOhm @ 1.3A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
2.2A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
38nC @ 10V
Input Capacitance (ciss) @ Vds
930pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Thermal Resistance
l
l
l
l
l
Absolute Maximum Ratings
www.irf.com
Applications
Notes  through † are on page 8
Benefits
I
I
I
P
V
dv/dt
T
T
Symbol
R
R
D
D
DM
J
STG
D
GS
θJL
θJA
@ T
@ T
Effective C
App. Note AN1001)
and Current
@T
High frequency DC-DC converters
Lead-Free
Low Gate to Drain Charge to Reduce
Fully Characterized Capacitance Including
Fully Characterized Avalanche Voltage
Switching Losses
A
A
A
= 25°C
= 70°C
= 25°C
OSS
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation„
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt †
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Drain Lead
Junction-to-Ambient
to Simplify Design (See
Parameter
Parameter
SMPS MOSFET
GS
GS
@ 10V
@ 10V
G
S
S
S
V
250V
1
2
3
4
DSS
Top View
Typ.
300 (1.6mm from case )
–––
–––
HEXFET
0.23
8
7
6
5
-55 to + 150
R
Max.
0.02
W
DS(on)
± 30
2.2
1.7
2.5
D
D
D
17
13
D
A
A
@V
IRF7453PbF
®
GS
Power MOSFET
max
Max.
= 10V
20
50
SO-8
2.2A
Units
Units
W/°C
°C/W
I
V/ns
D
°C
W
A
V
1
10/12/04

Related parts for IRF7453PBF

IRF7453PBF Summary of contents

Page 1

... R Junction-to-Ambient θJA Notes  through † are on page 8 www.irf.com SMPS MOSFET V DSS 250V Top View @ 10V GS @ 10V GS 300 (1.6mm from case ) Typ. ––– „ ––– IRF7453PbF ® HEXFET Power MOSFET R max I DS(on 0. 10V 2. SO-8 Max. Units 2 ...

Page 2

... IRF7453PbF Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Dynamic @ T = 25°C (unless otherwise specified) ...

Page 3

... Fig 2. Typical Output Characteristics 3 2.5 2.0 1.5 1.0 0.5 = 50V 0.0 7.0 7.5 -60 -40 -20 Fig 4. Normalized On-Resistance IRF7453PbF VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 5.0V 20µs PULSE WIDTH ° 150 Drain-to-Source Voltage (V) DS 2.2A ...

Page 4

... IRF7453PbF 10000 0V MHZ C iss = rss = oss = Ciss 1000 Coss Crss 100 Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 150 C ° 0.1 0.2 0.4 0.6 0.8 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage SHORTED 100 1000 0 0 Fig 6. Typical Gate Charge Vs. ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com Fig 10a. Switching Time Test Circuit V DS 90% 125 150 ° 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7453PbF + - ≤ 1 ≤ 0 d(off thJA A ...

Page 6

... IRF7453PbF 0.26 0.24 0. 10V 0.20 0. Drain Current (A) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. V 50KΩ GS .2µF 12V .3µ D.U. 3mA Current Sampling Resistors Fig 14a&b. Basic Gate Charge Test Circuit and Waveform V (BR)DSS 20V Fig 15a&b. Unclamped Inductive Test circuit ...

Page 7

... 6.46 [.255] 3X 1.27 [.050] DAT E CODE (YWW DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL LAST DIGIT YEAR WW = WEEK XXXX SEMBLY CODE F 7101 LOT CODE PART NUMBER IRF7453PbF INCHES MILLIMET ERS DIM MIN MAX MIN MAX A .0532 .0688 1.35 1.75 A1 .0040 .0098 ...

Page 8

... IRF7453PbF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ...

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